Leo V Klos

US Patent:

6448567, Sep 10, 2002

Filed:

Apr 25, 2000

Appl. No.:

09/557543

Inventors:

James Botelho - Salisbury MA
Leo V. Klos - Newburyport MA

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 3718

US Classification:

25049221, 25044111

Abstract:

A method and apparatus for shielding a valve gate from potentially harmful environmental conditions. A valve gate can be moved from a closed position, in which the valve gate closes a valve passage and is potentially exposed to harmful environmental conditions, to a retracted position, in which the valve gate is shielded from the harmful environmental conditions. For example, the valve gate can be retracted inside a housing and a door can be closed over an opening in the housing to protect the valve gate. Other portions of the valve, such as a valve seat, can also be protected from harmful conditions, e. g. , by closing a valve seat opening to prevent substances or other environmental conditions from leaving the valve passage.

US Patent:

7102139, Sep 5, 2006

Filed:

Jan 27, 2005

Appl. No.:

11/044659

Inventors:

Russell J. Low - Rowley MA, US
Eric R. Cobb - Danvers MA, US
Joseph C. Olson - Beverly MA, US
Leo V. Klos - Newburyport MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 7/24

US Classification:

250426, 250423 R, 25042921, 250427, 31511181

Abstract:

An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

US Patent:

7276847, Oct 2, 2007

Filed:

Apr 4, 2001

Appl. No.:

09/826274

Inventors:

Joseph C. Olson - Beverly MA, US
Leo Klos - Newburyport MA, US
Anthony Renau - West Newbury MA, US
Nicholas A. Venuto - Arlington MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 29/46

US Classification:

313446

Abstract:

A cathode in an indirectly heated cathode ion source is supported by at least one rod or pin. The cathode is preferably in the form of a disk, and the support rod is smaller in diameter than the disk to limit thermal conduction and radiation. In one embodiment, the cathode is supported by a single rod at or near its center. The support rod may be held by a spring-action clamp for simple and reliable clamping and unclamping. The disk shaped cathode and the support rod may be fabricated as a single piece. A filament that emits electrons thermionically may be disposed around the rod in close proximity to the cathode.

US Patent:

7491947, Feb 17, 2009

Filed:

Aug 16, 2006

Appl. No.:

11/505168

Inventors:

Eric R. Cobb - Danvers MA, US
Russell J. Low - Rowley MA, US
Craig R. Chaney - Rockport MA, US
Leo V. Klos - Newburyport MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 27/08

US Classification:

250426, 250423 R, 250424, 2504922, 25049221

Abstract:

A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0. 5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.

US Patent:

8049192, Nov 1, 2011

Filed:

Dec 24, 2009

Appl. No.:

12/647152

Inventors:

Neil J. Bassom - Hamilton MA, US
Leo V. Klos - Newburyport MA, US
Joseph C. Olson - Beverly MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

G21K 5/04
G21K 1/00

US Classification:

25049222, 25049223, 2505051, 250251

Abstract:

An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the ribbon beam. The ion beam blocking array includes a drive motor, an axle connected to the drive motor and a plurality of profile wheels disposed along the axle where each of the profile wheels is configured to rotate when the axle rotates. Each of the profile wheels is disposed across a width of the ribbon beam and has a position corresponding to a location along the width of the beam.

US Patent:

8071956, Dec 6, 2011

Filed:

Mar 10, 2010

Appl. No.:

12/720933

Inventors:

Craig R. Chaney - Lanesville MA, US
Alexander S. Perel - Danvers MA, US
Leo V. Klos - Newburyport MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 37/28

US Classification:

250423R, 134 15

Abstract:

An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

US Patent:

8455839, Jun 4, 2013

Filed:

Mar 10, 2010

Appl. No.:

12/720960

Inventors:

Craig R. Chaney - Lanesville MA, US
Alexander S. Perel - Danvers MA, US
Neil J. Bassom - Hamilton MA, US
Leo V. Klos - Newburyport MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01J 37/28
B08B 7/00

US Classification:

250423R, 25049221, 134 6, 134 9, 15 971

Abstract:

An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

US Patent:

20030218428, Nov 27, 2003

Filed:

May 23, 2002

Appl. No.:

10/154232

Inventors:

Peter Maciejowski - Amesbury MA, US
Joseph Olson - Beverly MA, US
Shengwu Chang - Newburyport MA, US
Bjorn Pedersen - Chelmsford MA, US
Leo Klos - Newburyport MA, US
Daniel Distaso - Merrimac MA, US
Curt Bergeron - Danvers MA, US

International Classification:

H05B031/26

US Classification:

315/111810, 315/111710

Abstract:

An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.