Leobardo G Mercado

US Patent:

61301698, Oct 10, 2000

Filed:

May 21, 1999

Appl. No.:

9/316491

Inventors:

Jeffrey A. Shields - Sunnyvale CA
King Wai Kelwin Ko - San Jose CA
Leobardo Mercado - Hollister CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2100

US Classification:

438725

Abstract:

The inventive method allows for a more complete stripping of photoresist and sidewall polymer in the production of semiconductor devices using a four step process in a plasma stripper. The first step uses CF. sub. 4, O. sub. 2, and H. sub. 2 O as etchant gases in a downstream quartz (DSQ) chamber at a low pressure, which are ionized by radio waves for a period of between 5 and 20 seconds. The second step discontinues the radio waves, while continuing the flow of etchant gases and heating the semiconductor. The third step only provides H. sub. 2 O vapor to the DSQ chamber. The fourth step provides both O. sub. 2 and H. sub. 2 O as etchant gases ionized by radio waves to remove the remaining resist.