Leonard M Rubin

US Patent:

6984832, Jan 10, 2006

Filed:

Apr 15, 2004

Appl. No.:

10/825527

Inventors:

Alfred M. Halling - Wenham MA, US
Leonard M. Rubin - Peabody MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/304
H01J 37/317

US Classification:

25049221

Abstract:

The present invention includes an angle adjuster that alters the path of an ion beam prior to contacting a target wafer. The path is altered according to a target position on the wafer in one or two dimensions in order to compensate for angle variations inherent in batch ion implantation system. The angle adjuster comprises one or more bending elements that controllably alter the path of the ion beam during ion implantation. As a result, the target wafer can be implanted with a substantially uniform implant angle.

US Patent:

7728293, Jun 1, 2010

Filed:

Nov 29, 2007

Appl. No.:

11/947632

Inventors:

Leonard M. Rubin - South Hamilton MA, US
Ivan Berry - Amesbury MA, US
Walter Class - West Newbury MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G01N 21/00

US Classification:

250309

Abstract:

The present invention involves an ion beam angular measurement apparatus for providing feedback for a predetermined set ion beam angle comprising an arrangement of composite pillars formed on an insulating material and wherein the composite pillars selectively allow ion beams to penetrate a first layer of a pillar, wherein resistivity measurements are taken for each of the composite pillars before and after test ion beam implantation and wherein the resistivity measurements yield information relating to an angle of the ion beam during test.

US Patent:

62556622, Jul 3, 2001

Filed:

Oct 27, 1998

Appl. No.:

9/179314

Inventors:

Leonard Michael Rubin - Peabody MA
Shaun Dean Wilson - Newfields NH
Yuri Erokhin - Newburyport MA

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 3730
H01J 37304

US Classification:

25049221

Abstract:

A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a rotating workpiece support is disposed within the process chamber for mounting one or more semiconductor workpieces. An energy source sets up an ion plasma from which is created an ion beam which is caused to impact the surface of the semiconductor workpiece. A Rutherford backscattering detector measures the intensity of backscattered particles and the backscattered ion intensity is correlated to an angle of incidence between the ion beam and the crystalline structure of the semiconductor workpiece.

US Patent:

20080100984, May 1, 2008

Filed:

Oct 25, 2007

Appl. No.:

11/924166

Inventors:

Marvin Raymond LaFontaine - Kingston NH, US
Michael Pharand - Los Gatos CA, US
Leonard Michael Rubin - S. Hamilton MA, US
Klaus Becker - Kensington NH, US

International Classification:

H01L 21/683
H01L 21/761

US Classification:

361234, 438414, 257E21544

Abstract:

A method for manufacturing a semiconductor wafer electrostatic clamp, comprising providing a mounting plate, forming an insulative layer on an insulating portion of the mounting plate, forming a first electrode on a first portion of the mounting plate, forming a second electrode on a second portion of the mounting plate, forming a first segment having a first conductivity over the first electrode, forming a first region having a second conductivity over the first segment that creates an n-p type composite, forming a second segment having a third conductivity formed over the over the second electrode, forming a second region having a fourth conductivity formed over the second region that creates an p-n type composite.

US Patent:

20070176123, Aug 2, 2007

Filed:

Jan 31, 2006

Appl. No.:

11/343760

Inventors:

Leonard Rubin - S. Hamilton MA, US
John Poate - Boulder CO, US

International Classification:

H01J 37/317

US Classification:

250492210

Abstract:

An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. Various magnets located along the beamline are provided for manipulating the ion beam and ions. Ion beam implanters having magnets including superconducting magnet coils are disclosed.