Dr. Nguyen graduated from the Med & Pharm Univ, Ho Chi Minh City, Vietnam (942 01 Eff 1/83) in 1973. He works in Hawthorne, CA and specializes in Family Medicine. Dr. Nguyen is affiliated with Providence Little Company Of Mary Medical Center Torrance and Torrance Memorial Medical Center.
Name / Title
Company / Classification
Phones & Addresses
Lieu Nguyen President
Delicate Nails & Spa Inc Manicures & Pedicures
404 International Blvd, Oakland, CA 94606 1622 Locust St, Walnut Creek, CA 94596 9259441629
Us Patents
Method For Local Rip-Up And Reroute Of Signal Paths In An Ic Design
Lieu T. Nguyen - San Jose CA Kwok Ming Yue - Fremont CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H01L 2350
US Classification:
364490
Abstract:
The present invention provides a local rip-up and reroute (LRR) method to reduce the number of open nets after the initial routers have been applied. Two main tasks are performed under this method. The first task is to identify a locally blocked pin and rip up wire segments in an area around the cell having the locally blocked pin. The second task is to reroute the now freed locally blocked pin. In the first task, an open net is read from the list of open nets. The pins of this open net are identified and determined if they are locally blocked. A pin is considered as locally blocked if a routing path, starting from the pin, cannot be found within N grid point expansions. If a pin is locally blocked, segments of wires within or at the boundary of a predefined bounding box are removed (or ripped-up)--except for two situations. The first exception is that a wire that is connected to a pin is not ripped-up. The second exception is that a SM wire segment that occupies only one horizontal track running through both boundaries of the bounding box is not ripped-up.
Estimation Of Voltage Drop And Current Densities In Asic Power Supply Mesh
Wolfgang Roethig - San Jose CA Lieu T. Nguyen - San Jose CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
G01R 3126
US Classification:
324765
Abstract:
The present invention provides an analytical solution for voltage drop and current density calculation based on design-specific current consumption. The new technique calculates voltage drop and current density at all desired points of the power supply mesh. One application of the method is power mesh sizing by scaling the mesh resistance by the ratio between allowed voltage drop budget and the maximum of the calculated voltage drop. The designer can easily obtain the maximum allowed resistance of a uniform mesh which meets exactly the voltage drop budget, taking into account the design-specific spatial distribution of current consumption. Since the computational cost of the new methodology is negligible, e. g. as compared to prior art methods of analysis, this invention is suitable for implementation embedded in an RTL floorplan tool for fast, interactive tradeoff between floorplan location and voltage drop.