Lin Kau Cheng

US Patent:

20160211360, Jul 21, 2016

Filed:

Mar 31, 2016

Appl. No.:

15/087406

Inventors:

- Durham NC, US
Anant Kumar Agarwal - Arlington VA, US
Lin Cheng - Chapel Hill NC, US
Daniel Jenner Lichtenwalner - Raleigh NC, US
John Williams Palmour - Cary NC, US

International Classification:

H01L 29/78
H01L 29/10
H01L 29/06
H01L 29/08

Abstract:

A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a drift layer over the substrate, and a spreading layer over the drift layer. The spreading layer includes a pair of junction implants separated by a junction gate field effect (JFET) region. A gate oxide layer is on top of the spreading layer. The gate contact is on top of the gate oxide layer. Each one of the source contacts are on a portion of the spreading layer separate from the gate oxide layer and the gate contact. The drain contact is on the surface of the substrate opposite the drift layer.

US Patent:

20150097226, Apr 9, 2015

Filed:

Oct 3, 2013

Appl. No.:

14/045466

Inventors:

- Durham NC, US
Anant Kumar Agarwal - Arlington VA, US
Lin Cheng - Chapel Hill NC, US
Vipindas Pala - Morrisville NC, US
John Williams Palmour - Cary NC, US

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 29/49
H01L 29/66
H01L 29/78

US Classification:

257329, 438591

Abstract:

A vertically oriented field effect device has a body and an enhance gate structure. The body includes a JFET (junction field effect transistor) region disposed between junction implants that extend into the body from a top surface of the body. The gate structure includes a supplemental gate dielectric, a primary gate dielectric, and a gate contact. The supplemental gate dielectric is formed over the top surface of the body above the JFET region, such that the supplemental dielectric is separated from the junction implants by a gap. The primary gate dielectric is formed over the supplemental gate dielectric, above the gap over the top surface of the body, and over at least a portion of the junction implants. The gate contact is formed over the primary gate dielectric.