Prashant Mandlik - Princeton NJ, US Sigurd Wagner - Princeton NJ, US Jeffrey A. Silvernail - Yardley PA, US Ruiqing Ma - Morristown NJ, US Julia J. Brown - Yardley PA, US Lin Han - Princeton NJ, US
Assignee:
The Trustees of Princeton University - Princeton NJ Universal Display Corporation - Ewing NJ
International Classification:
H01L 21/44 H01L 21/48
US Classification:
438106, 438126
Abstract:
A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
Hybrid Dielectric Material For Thin Film Transistors
Lin HAN - Princeton NJ, US Prashant MANDLIK - Lawrenceville NJ, US Sigurd WAGNER - Princeton NJ, US
Assignee:
THE TRUSTEES OF PRINCETON UNIVERSITY - PRINCETON NJ
International Classification:
H01L 51/50 H01L 33/08
US Classification:
257 40, 257 59, 257E33053, 257E51018
Abstract:
Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.
Hybrid Dielectric Material For Thin Film Transistors
Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.
Electronic Device With Reduced Non-Device Edge Area
Prashant Mandlik - Lawrenceville NJ, US Ruiqing Ma - Morristown NJ, US Jeff Silvernail - Yardley PA, US Julie J. Brown - Yardley PA, US Lin Han - Princeton NJ, US Sigurd Wagner - Princeton NJ, US Luke Walski - Princeton NJ, US
A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.
Hybrid Layers For Use In Coatings On Electronic Devices Or Other Articles
Jeffrey A. SILVERNAIL - Yardley PA, US Ruiqing MA - Morristown NJ, US Julia J. BROWN - Yardley PA, US Lin HAN - Princeton NJ, US
Assignee:
UNIVERSAL DISPLAY CORPORATION - EWING NJ THE TRUSTEES OF PRINCETON UNIVERSITY - PRINCETON NJ
International Classification:
H01L 51/52
US Classification:
257 40
Abstract:
A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
Electronic Device With Reduced Non-Device Edge Area
- Ewing NJ, US - Princeton NJ, US Jeffrey SILVERNAIL - Yardley PA, US Julia J. BROWN - Yardley PA, US Lin HAN - Princeton NJ, US Sigurd WAGNER - Princeton NJ, US Luke WALSKI - Princeton NJ, US
A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.
Method To Produce Micro And Nanofibers With Controlled Diameter And Large Yield
- Philadelphia PA, US Mingkun Wang - Philadelphia PA, US Chunxiao Cui - Philadelphia PA, US Alisa Morss Clyne - Ardmore PA, US Momtaz Alhindi - Horsham PA, US Jeffrey Krystek - Newtown PA, US Victor Micucci - Riverside NJ, US Evan Ostrow - Penllyn PA, US Sabah Shafi - Turnersville NJ, US Lin Han - Philadelphia PA, US
In one embodiment, the present invention is a method for producing microfibers comprising the steps of: (a) providing a base material; (b) forming the base material in a ring; (c) gripping opposing ends of the ring; (d) flipping one of the opposing ends relative to the other of the opposing ends, forming an upper portion and a lower portion; (e) folding the upper portion onto the lower portion; (f) stretching the folded upper and lower portions; and (g) repeating steps (d)-(f) as desired.
Electronic Device With Reduced Non-Device Edge Area
- Ewing NJ, US - Princeton NJ, US Jeffrey SILVERNAIL - Yardley PA, US Julia J. BROWN - Yardley PA, US Lin HAN - Ewing NJ, US Sigurd WAGNER - Princeton NJ, US Luke WALSKI - Princeton NJ, US
International Classification:
H01L 51/52 H01L 51/56 H01L 27/32 H01L 25/075
Abstract:
A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.
Donggang Fishermens Association chief executive Lin Han-chou () said Hung Shih-chengs family called in to the local fishery radio station to report an attack on their vessel by Philippine naval forces, saying it had been incapacitated.