Lin L Han

age ~59

from Belle Mead, NJ

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Also known as:
  • Han Lin
Related to:
Connected to:

Lin Han Phones & Addresses

  • Belle Mead, NJ
  • 33 Shetland Ct, Edison, NJ 08817 • 7322050083
  • Princeton, NJ
  • Middlesex, NJ
  • Streamwood, IL
  • Woodbridge, NJ
  • Wakefield, MA
  • East Rutherford, NJ
  • Iselin, NJ

Work

  • Company:
    Century Home Realty Group
  • Address:
  • Phones:
    6466628888

Images

Specialities

Residential sales • Luxury homes • First time home buyers • Relocation

Resumes

Lin Han Photo 1

Lin Han

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Lin Han Photo 2

Student At Princeton University

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Position:
student at Princeton University
Location:
Greater New York City Area
Industry:
Publishing
Work:
Princeton University
student
Lin Han Photo 3

Lin Han

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Location:
United States

Real Estate Brokers

Lin Han Photo 4

Lin Han, New York Agent

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Specialties:
Residential sales
Luxury homes
First time home buyers
Relocation
Work:
Century Home Realty Group
6466628888 (Phone)
License #10401247484
Client type:
Home Buyers
Home Sellers
Property type:
Single Family Home
Condo/Townhome
Multi-family

Us Patents

  • Hybrid Layers For Use In Coatings On Electronic Devices Or Other Articles

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  • US Patent:
    8592253, Nov 26, 2013
  • Filed:
    May 5, 2009
  • Appl. No.:
    12/990860
  • Inventors:
    Prashant Mandlik - Princeton NJ, US
    Sigurd Wagner - Princeton NJ, US
    Jeffrey A. Silvernail - Yardley PA, US
    Ruiqing Ma - Morristown NJ, US
    Julia J. Brown - Yardley PA, US
    Lin Han - Princeton NJ, US
  • Assignee:
    The Trustees of Princeton University - Princeton NJ
    Universal Display Corporation - Ewing NJ
  • International Classification:
    H01L 21/44
    H01L 21/48
  • US Classification:
    438106, 438126
  • Abstract:
    A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

  • Hybrid Dielectric Material For Thin Film Transistors

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  • US Patent:
    20110068332, Mar 24, 2011
  • Filed:
    Nov 10, 2010
  • Appl. No.:
    12/943398
  • Inventors:
    Lin HAN - Princeton NJ, US
    Prashant MANDLIK - Lawrenceville NJ, US
    Sigurd WAGNER - Princeton NJ, US
  • Assignee:
    THE TRUSTEES OF PRINCETON UNIVERSITY - PRINCETON NJ
  • International Classification:
    H01L 51/50
    H01L 33/08
  • US Classification:
    257 40, 257 59, 257E33053, 257E51018
  • Abstract:
    Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

  • Hybrid Dielectric Material For Thin Film Transistors

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  • US Patent:
    20110180789, Jul 28, 2011
  • Filed:
    Jul 30, 2009
  • Appl. No.:
    13/056704
  • Inventors:
    Lin Han - Princeton NJ, US
    Prashant Mandlik - Lawrenceville NJ, US
    Sigurd Wagner - Princeton NJ, US
  • International Classification:
    H01L 51/52
    H01L 51/10
    H01L 29/786
    H01L 29/04
    H01L 21/316
  • US Classification:
    257 40, 257 43, 257 57, 257 66, 438770, 257E29289, 257E29292, 257E29296, 257E51003, 257E51018, 257E29003, 257E21282
  • Abstract:
    Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

  • Electronic Device With Reduced Non-Device Edge Area

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  • US Patent:
    20130241076, Sep 19, 2013
  • Filed:
    Mar 16, 2012
  • Appl. No.:
    13/422924
  • Inventors:
    Prashant Mandlik - Lawrenceville NJ, US
    Ruiqing Ma - Morristown NJ, US
    Jeff Silvernail - Yardley PA, US
    Julie J. Brown - Yardley PA, US
    Lin Han - Princeton NJ, US
    Sigurd Wagner - Princeton NJ, US
    Luke Walski - Princeton NJ, US
  • Assignee:
    Universal Display Corporation - Ewing NJ
  • International Classification:
    H01L 23/28
    H01L 21/78
    H01L 21/56
    H01L 23/48
  • US Classification:
    257774, 257791, 438113, 438460, 438127, 257E23116, 257E23011, 257E21599, 257E21502
  • Abstract:
    A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

  • Hybrid Layers For Use In Coatings On Electronic Devices Or Other Articles

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  • US Patent:
    20140054574, Feb 27, 2014
  • Filed:
    Oct 29, 2013
  • Appl. No.:
    14/065877
  • Inventors:
    Jeffrey A. SILVERNAIL - Yardley PA, US
    Ruiqing MA - Morristown NJ, US
    Julia J. BROWN - Yardley PA, US
    Lin HAN - Princeton NJ, US
  • Assignee:
    UNIVERSAL DISPLAY CORPORATION - EWING NJ
    THE TRUSTEES OF PRINCETON UNIVERSITY - PRINCETON NJ
  • International Classification:
    H01L 51/52
  • US Classification:
    257 40
  • Abstract:
    A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

  • Electronic Device With Reduced Non-Device Edge Area

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  • US Patent:
    20220199956, Jun 23, 2022
  • Filed:
    Mar 15, 2022
  • Appl. No.:
    17/694887
  • Inventors:
    - Ewing NJ, US
    - Princeton NJ, US
    Jeffrey SILVERNAIL - Yardley PA, US
    Julia J. BROWN - Yardley PA, US
    Lin HAN - Princeton NJ, US
    Sigurd WAGNER - Princeton NJ, US
    Luke WALSKI - Princeton NJ, US
  • International Classification:
    H01L 51/52
    H01L 25/04
    H01L 25/075
    H01L 27/32
    H01L 51/56
  • Abstract:
    A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

  • Electronic Device With Reduced Non-Device Edge Area

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  • US Patent:
    20200058902, Feb 20, 2020
  • Filed:
    Oct 24, 2019
  • Appl. No.:
    16/662095
  • Inventors:
    - Ewing NJ, US
    - Princeton NJ, US
    Jeffrey SILVERNAIL - Yardley PA, US
    Julia J. BROWN - Yardley PA, US
    Lin HAN - Ewing NJ, US
    Sigurd WAGNER - Princeton NJ, US
    Luke WALSKI - Princeton NJ, US
  • International Classification:
    H01L 51/52
    H01L 51/56
    H01L 27/32
    H01L 25/075
  • Abstract:
    A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

  • Hybrid Layers For Use In Coatings On Electronic Devices Or Other Articles

    view source
  • US Patent:
    20170018732, Jan 19, 2017
  • Filed:
    Jan 28, 2016
  • Appl. No.:
    15/008834
  • Inventors:
    - Princeton NJ, US
    - Ewing NJ, US
    Jeffrey A. Silvernail - Yardley PA, US
    Ruiqing Ma - Morristown NJ, US
    Julia J. Brown - Yardley PA, US
    Lin Han - Princeton NJ, US
  • International Classification:
    H01L 51/52
    H01L 51/56
  • Abstract:
    A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.
Name / Title
Company / Classification
Phones & Addresses
Lin Han
President
USA TPN GROUP LTD

Plaxo

Lin Han Photo 5

Shih Han Lin Lin

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Taipei, TaiwanPast: Private at Republic of China Army Computer Science
Lin Han Photo 6

lin han

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Dell
Lin Han Photo 7

Han Tok Lin

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Laboratory technologist at National University of...

Classmates

Lin Han Photo 8

Lin Han

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Schools:
Desert Elementary School Wamsutter WY 1995-1999
Community:
Rachel White, Nancy Philbrick, Meriah Ziska, Dianna Adams
Lin Han Photo 9

Lin Han

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Schools:
All Saints Episcopal High School Vicksburg MS 1998-2002
Community:
Mary Spence, William West
Lin Han Photo 10

Lin Han, Butte High Schoo...

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Lin Han Photo 11

Han Lin | John J. Pershin...

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Lin Han Photo 12

All Saints Episcopal High...

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Graduates:
Susan Davis (1989-1993),
Katharine Higgins (1985-1989),
Lin Han (1998-2002),
Mary Smiley (1936-1940),
William Ogden (1977-1981)
Lin Han Photo 13

John J. Pershing Junior H...

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Graduates:
Andre Diaz (1990-1994),
William Ocasio (1993-1997),
Ibrahim Hamed (1995-1999),
Antonio Lopez (1993-1997),
Han Lin (2006-2010)

Youtube

Funniest Fails Of The Year Compilation

Funniest Fails Of The Year Compilation

Funniest Fails Of The Year Compilation Subscribe for more funny videos...

  • Duration:
    11m 45s

Fei Yun Zhi Xia - JJ Lin + Han Hong ( - ) T...

Fei Yun Zhi Xia - JJ Lin + Han Hong ( - ) Terjem...

Judul : Fei Yun Zhi Xia ... : JJ Lin + Han Hong ...

  • Duration:
    4m 24s

& JJ Lin & Han Hong - [Fei Yun Zhi Xia] Ly...

& JJ Lin & Han Hong - [Fei Yun Zhi Xia] Lyric w...

... JJ Lin & Han Hong - ... Yun Zhi Xia] Under The Cloud Lyrics Lyri...

  • Duration:
    4m 28s

Top 3 Duet Songs of Han Hong and Hebe Tian, J...

Top 3 Duet Songs of Han Hong and Hebe Tian, JJ Lin...

Han Hong is one of the top singers in China. The video picks the top 3...

  • Duration:
    11m 57s

Malko Competition 2021, Grand Finale: Linhan ...

Malko Competition 2021, Grand Finale: Linhan Cui

Malko #DNSO #DRKoncerthusetL... This video is from the Grand Finale o...

  • Duration:
    26m 30s

Chinese Pull Up Master-Lin Han

Chinese Pull Up Master-Lin Han
  • Duration:
    4m 24s

Myspace

Lin Han Photo 14

Lin Han

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Locality:
Las Vegas, Nevada
Gender:
Female
Birthday:
1943
Lin Han Photo 15

Lin Han

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Locality:
SF, California
Gender:
Female
Birthday:
1928

Googleplus

Lin Han Photo 16

Lin Han

Lin Han Photo 17

Lin Han

Education:
Tamkang University
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Lin Han

Education:
Nankai University
Lin Han Photo 19

Lin Han

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Lin Han

Lin Han Photo 21

Lin Han

Lin Han Photo 22

Lin Han

Lin Han Photo 23

Lin Han

Facebook

Lin Han Photo 24

Lin Han Bo

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Lin Han Boon
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Lin Han Rin

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Lin Han Photo 26

Wai Lin Han

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Lin Han Photo 27

Lin Zhen Han

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Lin Han Photo 28

Victoria Lin Han Keechi

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Lin Han Photo 29

Lin Min Han

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Lin Han Photo 30

Gena Lin Han

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Lin Han Photo 31

Kyaw Lin Han

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Flickr

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News

Fisherman Killed In Disputed Waters

Fisherman killed in disputed waters

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  • Donggang Fishermens Association chief executive Lin Han-chou () said Hung Shih-chengs family called in to the local fishery radio station to report an attack on their vessel by Philippine naval forces, saying it had been incapacitated.
  • Date: May 09, 2013
  • Category: World
  • Source: Google
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