Lin Zhang

US Patent:

6413871, Jul 2, 2002

Filed:

Jun 22, 1999

Appl. No.:

09/337983

Inventors:

Hichem MSaad - Santa Clara CA
Derek R. Witty - Fremont CA
Manoj Vellaikal - Santa Clara CA
Lin Zhang - San Jose CA
Yaxin Wang - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 213105

US Classification:

438692, 117569, 117574, 117579, 438690, 438691, 438694, 438759, 438761, 438762, 438763, 438784

Abstract:

A film of fluorine-doped silicon glass (âFSGâ) is exposed to a nitrogen-containing plasma to nitride a portion of the FSG film. In one embodiment, the FSG film is chemically-mechanically polished prior to nitriding. The nitriding process is believed to scavenge moisture and free fluorine from the FSG film. The plasma can heat the FSG film to about 400Â C. for about one minute to incorporate about 0. 4 atomic percent nitrogen to a depth of nearly a micron. Thus, the nitriding process can passivate the FSG film deeper than a via depth.

US Patent:

6468927, Oct 22, 2002

Filed:

May 19, 2000

Appl. No.:

09/574271

Inventors:

Lin Zhang - San Jose CA
Wen Ma - Milpitas CA
Zhuang Li - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438779, 438763, 438778, 438783, 438795, 438958

Abstract:

Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4. 8 and 11. 2 W/cm and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1. 0 and 1. 8, preferably between 1. 2 and 1. 4. For damascene applications, the bias power density is less than 3. 2 W/cm , preferably 1. 6 W/cm , and the flow rate ratio is between 1. 2 and 3.

US Patent:

6890597, May 10, 2005

Filed:

May 9, 2003

Appl. No.:

10/435296

Inventors:

Padmanabhan Krishnaraj - San Francisco CA, US
Bruno Geoffrion - San Jose CA, US
Michael S. Cox - Davenport CA, US
Lin Zhang - San Jose CA, US
Bikram Kapoor - Santa Clara CA, US
Anchuan Wang - Fremont CA, US
Zhenjiang Cui - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C016/40

US Classification:

4272481, 42725537, 427355, 438692, 438697, 438788

Abstract:

A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

US Patent:

6908862, Jun 21, 2005

Filed:

May 3, 2002

Appl. No.:

10/138189

Inventors:

Dongqing Li - Santa Clara CA, US
Xiaolin C. Chen - San Jose CA, US
Lin Zhang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L021/311

US Classification:

438700, 438666, 438667, 438668, 438672, 438673, 438978, 216 39

Abstract:

A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.

US Patent:

6929403, Aug 16, 2005

Filed:

Feb 10, 2003

Appl. No.:

10/364685

Inventors:

German Arciniegas - Fremont CA, US
Lin Zhang - Fremont CA, US

Assignee:

Opnext, Inc. - Fremont CA

International Classification:

G02B006/38
H01R013/627

US Classification:

385 55, 439352

Abstract:

An optical module having a latching mechanism to allow the module to be latched to a cage of a host system is disclosed. The latching mechanism includes a latch boss that can be engaged by a latch attached to the host cage to capture the module. The latching mechanism also includes a latch key that slides towards the latch boss to disengage the latch from the latch boss. The latch key is moved by a bail that rotates and exerts a force on the latch key by a cam surface.

US Patent:

7014866, Mar 21, 2006

Filed:

May 2, 2002

Appl. No.:

10/138071

Inventors:

Martin Howard Infeld - Upper Montclair NJ, US
Wantanee Phuapradit - Clifton NJ, US
Navnit Hargovindas Shah - Clifton NJ, US
Lin Zhang - Piscataway NJ, US

Assignee:

Hoffmann-La Roche Inc. - Nutley NJ

International Classification:

A61K 9/20

US Classification:

424464, 424451, 424470, 514772, 5147723

Abstract:

A solid unit oral pharmaceutical dosage form of amorphous nelfinavir mesylate is provided comprising amorphous nelfinavir mesylate in an amount of from about 400 mg to about 700 mg calculated as nelfinavir base, and a pharmaceutically acceptable water soluble, non-ionic synthetic block copolymer of ethylene oxide and propylene oxide, the copolymer having a melting point of at least about 45 C. and an HLB value at 25 C. of from about 18 to about 29, wherein the copolymer is present from about 40% to about 65% by weight of the nelfinavir mesylate. A hot melt granulation process for making the dosage form is provided.

US Patent:

7081414, Jul 25, 2006

Filed:

May 23, 2003

Appl. No.:

10/445240

Inventors:

Lin Zhang - San Jose CA, US
Xiaolin Chen - San Jose CA, US
DongQing Li - Santa Clara CA, US
Thanh N Pham - San Jose CA, US
Farhad K Moghadam - Saratoga CA, US
Zhuang Li - San Jose CA, US
Padmanabhan Krishnaraj - San Francisco CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438710, 438221, 438706, 438723

Abstract:

A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

US Patent:

7244658, Jul 17, 2007

Filed:

Oct 17, 2005

Appl. No.:

11/252400

Inventors:

Ellie Y Yieh - San Jose CA, US
Anchuan Wang - Fremont CA, US
Lin Zhang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/76

US Classification:

438424, 257374, 257E21545, 257E21546

Abstract:

The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0. 1 and 25 atomic % of the stress-lowering dopant.