Ling Huey Chen

US Patent:

6355106, Mar 12, 2002

Filed:

Nov 3, 2000

Appl. No.:

09/706321

Inventors:

Bo Zheng - San Jose CA
Ling Chen - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118697, 118696, 118715, 700 1, 700 90, 700 95, 427535, 427533, 427534, 427252, 427253

Abstract:

A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

US Patent:

6358323, Mar 19, 2002

Filed:

Jul 21, 1998

Appl. No.:

09/120004

Inventors:

John Schmitt - Sunnyvale CA
Frank P. Chang - San Jose CA
Xin Shen Guo - Los Altos Hills CA
Ling Chen - Sunnyvale CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118726, 118715

Abstract:

A deposition system for performing chemical vapor deposition comprising deposition chamber having a lid and a vaporizer attached to the lid is provided. Additionally, one or more valves disposed between the lid and the vaporizer to limit the flow of precursor material to the chamber and to improve purging of a precursor material delivery system attached to the vaporizer. The precursor delivery system has one or more conduction lines. One of the conduction lines is a flexible conduction line in the form of a multiple turn coil having a torsional elasticity suitable for allowing detachment of the lid from the chamber without having to break or disassemble a conduction line. Preferably, the flexible conduction line is a thirty (30) turn coil having a diameter of approximately three (3) inches fabricated from stainless steel tubing. Alternately, the flexible conduction line is made from a permeable membrane material such as a fluorocarbon compound such as TEFLONÂ, a fluorocarbon containing compound or PFA 440-HP which is then encased in a sheath. The sheath is connected to a pressure control unit to allow degassing of the conduction lines and space between the conduction lines and sheath.

US Patent:

6402806, Jun 11, 2002

Filed:

Jun 30, 2000

Appl. No.:

09/608659

Inventors:

John Vincent Schmitt - Sunnyvale CA
Ling Chen - Sunnyvale CA
George Michael Bleyle - Fremont CA
Yu Cong - Sunnyvale CA
Alfred Mak - Union City CA
Mei Chang - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C22B 1500

US Classification:

75414, 75639, 4232453, 423240 R, 427253

Abstract:

A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.

US Patent:

6410089, Jun 25, 2002

Filed:

Feb 24, 2000

Appl. No.:

09/513723

Inventors:

Xin Sheng Guo - Los Altos Hills CA
Keith Koai - Los Gatos CA
Ling Chen - Sunnyvale CA
Mohan K. Bhan - Cupertino CA
Bo Zheng - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1680

US Classification:

427250, 427252, 118715

Abstract:

A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

US Patent:

6412004, Jun 25, 2002

Filed:

Mar 27, 1997

Appl. No.:

08/826480

Inventors:

Ling Tony Chen - Cupertino CA
Dawson Frank Dean - Piedmont CA

Assignee:

Microsoft Corporation - Redmond WA

International Classification:

G06F 1516

US Classification:

709226, 709203, 709219, 709231

Abstract:

A metaserver for managing the delivery of multimedia streams from, a plurality of multimedia servers to multiple clients over a diverse network is disclosed. The metaserver allows one to eliminate the bottleneck problem associated with the limited speed of a single multimedia server, reduce the network congestion and increase the fault tolerance of the whole system.

US Patent:

6436192, Aug 20, 2002

Filed:

Jan 11, 2000

Appl. No.:

09/481055

Inventors:

Ling Chen - Sunnyvale CA
Joseph Yudovsky - Palo Alto CA
Ying Yu - Cupertino CA
Lawrence C. Lei - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118696, 118728, 118500

Abstract:

A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

US Patent:

6498091, Dec 24, 2002

Filed:

Nov 1, 2000

Appl. No.:

09/704161

Inventors:

Ling Chen - Sunnyvale CA
Seshadri Ganguli - Sunnyvale CA
Wei Cao - Milpitas CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 214763

US Classification:

438627, 438643, 438653, 438685, 438687, 438694, 438695, 438696, 438707, 438763

Abstract:

A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.

US Patent:

6562715, May 13, 2003

Filed:

Aug 9, 2000

Appl. No.:

09/635738

Inventors:

Ling Chen - Sunnyvale CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1418

US Classification:

438643, 438653, 438679, 438680, 438685, 438687, 427 97, 427250, 427255394, 427255395, 4272557, 427305, 20419217, 205157, 205184, 205186, 205187

Abstract:

A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.