Lisa A Allen

US Patent:

6537606, Mar 25, 2003

Filed:

Jul 10, 2001

Appl. No.:

09/902306

Inventors:

Lisa P. Allen - Beverly MA
David B. Fenner - Westford MA

Assignee:

Epion Corporation - Billerica MA

International Classification:

B05D 100

US Classification:

427 9, 427 8, 427534, 20419211, 20419234, 20429804, 20429836, 118723 CB, 118712, 118664, 118688, 216 38, 216 59, 216 66

Abstract:

The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

US Patent:

49448358, Jul 31, 1990

Filed:

Mar 30, 1989

Appl. No.:

7/330458

Inventors:

Lisa P. Allen - Norton MA
Michael W. Batty - No. Attleboro MA
Richard H. Morrision - Taunton MA
Paul M. Zavracky - Norwood MA

Assignee:

Kopin Corporation - Taunton MA

International Classification:

C30B 1332
C30B 108
C30B 1908
C30B 2906

US Classification:

1566207

Abstract:

An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow discontinuous pattern of seed openings formed by an overlapping sub-pattern of discontinuous shaped openings. Alternatively, in an edge bead seed embodiment, a resist is removed from an SOI precursor structure, comprising an insulator on an Si wafer, thus exposing the peripheral edge of the insulator. The exposed insulator is then also removed to provide a peripheral edge seed opening to the underlying Si wafer.

US Patent:

48850527, Dec 5, 1989

Filed:

Nov 13, 1987

Appl. No.:

7/120016

Inventors:

John C. C. Fan - Chestnut Hill MA
Paul M. Zavracky - Norwood MA
Jagdish Narayan - Raleigh NC
Lisa P. Allen - Norton MA

Assignee:

Kopin Corporation - Taunton MA

International Classification:

C30B 1300

US Classification:

1566207

Abstract:

An improved method of zone-melting and recrystallizing of polysilicon film on an insulator over silicon is described.

US Patent:

51205092, Jun 9, 1992

Filed:

Nov 2, 1990

Appl. No.:

7/608559

Inventors:

Paul M. Zavracky - Norwood MA
Thomas P. Ford - Hopedale MA
Lisa P. Allen - Norton MA

Assignee:

Kopin Corporation - Taunton MA

International Classification:

C30B 1300

US Classification:

422248

Abstract:

A method and apparatus for reducing branching, reducing defects, and improving the overall surface morphology of silicon on insulator (SOI) structures produced by Zone Melting and Recrystallization (ZMR) is described. A special heater for use in preparing SOI structures formed by ZMR comprises a graphite mass having corrugations extending along one or more side walls and which may be periodic. The heater provides concentrated regions of heat which vary periodically across the length of the molten zone of the SOI structure. Alternatively, the heater comprises a stationary lower heater member upon which the wafer is placed and a movable upper heater member having corrugations. ZMR is achieved by translating the corrugated upper heater member past the wafer. In yet another alternative, a well known strip heater having a uniformly shaped movable upper member is improved by replacing the upper member with a movable upper heater member having corrugations.

US Patent:

54531535, Sep 26, 1995

Filed:

Mar 5, 1992

Appl. No.:

7/849632

Inventors:

John C. C. Fan - Chestnut Hill MA
Paul M. Zavracky - Norwood MA
Jagdish Narayan - Raleigh NC
Lisa P. Allen - Norton MA
Ngwe K. Cheong - Boston MA

Assignee:

Kopin Corporation - Taunton MA

International Classification:

C30B 1300

US Classification:

117 2

Abstract:

An improved method of zone-melting recrystallizing of a silicon film on an insulator in which the film is implanted and annealed to achieve a reduction of the density of defects within the film.

US Patent:

50211196, Jun 4, 1991

Filed:

Oct 18, 1990

Appl. No.:

7/600246

Inventors:

John C.C. Fan - Chestnut Hill MA
Paul M. Zavracky - Norwood MA
Jagdish Narayan - Raleigh NC
Lisa P. Allen - Norton MA

Assignee:

Kopin Corporation - Taunton MA

International Classification:

C30B 1300

US Classification:

15662071

Abstract:

A method for reducing defects after zone melting and recrystallization of semiconductor films formed on an insulator over a semiconductor substrate by selectively removing portion of a first layer over the semiconductor film, amorphizing the exposed film portion and laterally regrowing the amorphized region.