Long T Nguyen

US Patent:

6344432, Feb 5, 2002

Filed:

Dec 8, 2000

Appl. No.:

09/732370

Inventors:

William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 904

US Classification:

510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2

Abstract:

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

US Patent:

6383410, May 7, 2002

Filed:

Aug 8, 2001

Appl. No.:

09/925874

Inventors:

William A. Wojtczak - San Jose CA
Long Nguyen - Milpitas CA
Stephen A. Fine - Peabody MA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C09K 1300

US Classification:

252 791, 252 793, 252 794, 438745, 438756

Abstract:

The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0. 1-10%; preferably 0. 2-2. 8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1. 65-7%; preferably 2. 25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.

US Patent:

6409781, Jun 25, 2002

Filed:

May 1, 2000

Appl. No.:

09/562298

Inventors:

William A. Wojtczak - Santa Clara CA
Thomas H. Baum - New Fairfield CT
Long Nguyen - San Jose CA
Cary Regulski - San Jose CA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C09K 314

US Classification:

51308, 51307, 51309, 106 3, 438692, 438693, 252 791

Abstract:

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

US Patent:

6492310, Dec 10, 2002

Filed:

Mar 7, 2001

Appl. No.:

09/801543

Inventors:

William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Long Nguyen - Milpitas CA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 162

US Classification:

510175, 510176, 510177, 134 13, 438118, 438637

Abstract:

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

US Patent:

6566315, May 20, 2003

Filed:

Dec 5, 2001

Appl. No.:

10/007490

Inventors:

William A. Wojtczak - Austin TX
Ma. Fatima Seijo - Hayward CT
Dave Bernhard - Newtown CT
Long Nguyen - San Jose CA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

B08B 600

US Classification:

510175, 510176, 510177, 510178, 510506, 134 2, 134 3

Abstract:

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

US Patent:

6527819, Mar 4, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/022308

Inventors:

William A. Wojtczak - Austin TX
Thomas H. Baum - New Fairfield CT
Long Nguyen - San Jose CA
Cary Regulski - Sugarhill GA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C09G 102

US Classification:

51308, 51307, 51309, 106 3, 438692, 438693, 252 791, 252 792, 252 795, 216 89, 216 99, 216101, 216105, 216106

Abstract:

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

US Patent:

6599870, Jul 29, 2003

Filed:

Jun 25, 2002

Appl. No.:

10/179867

Inventors:

William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Long Nguyen - Milpitas CA

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C11D 710

US Classification:

510175, 510176, 510178

Abstract:

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight):.

US Patent:

6660700, Dec 9, 2003

Filed:

Nov 15, 2001

Appl. No.:

10/003373

Inventors:

William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA

Assignee:

Advanced Technologies Materials, Inc. - Danbury CT

International Classification:

C11D 904

US Classification:

510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2

Abstract:

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Address:

2377 Story Rd, San Jose, CA 95122

Phone:

4082582878

VIN:

4T1BK3EK2BU630334

Make:

TOYOTA

Model:

CAMRY

Year:

2011