Long K Pham

Address:

550 Lily Ann Way, San Jose, CA 95123

VIN:

4T3BK11A19U005426

Make:

TOYOTA

Model:

VENZA

Year:

2009

US Patent:

6542407, Apr 1, 2003

Filed:

Jan 18, 2002

Appl. No.:

10/052759

Inventors:

Jian Chen - San Jose CA
Long C. Pham - San Jose CA
Alexander K. Mak - Los Altos CA

Assignee:

SanDisk Corporation - Sunnyvale CA

International Classification:

G11C 1600

US Classification:

36518517, 36518509, 36518503

Abstract:

Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

US Patent:

6847553, Jan 25, 2005

Filed:

Feb 3, 2003

Appl. No.:

10/357840

Inventors:

Jian Chen - San Jose CA, US
Long C. Pham - San Jose CA, US
Alexander K. Mak - Los Altos CA, US

Assignee:

SanDisk Corporation - Sunnyvale CA

International Classification:

G11C 1600

US Classification:

36518509, 36518503

Abstract:

Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

US Patent:

6944068, Sep 13, 2005

Filed:

Mar 24, 2004

Appl. No.:

10/809571

Inventors:

Khandker N. Quader - Sunnyvale CA, US
Khanh T. Nguyen - Sunnyvale CA, US
Feng Pan - San Jose CA, US
Long C. Pham - San Jose CA, US
Alexander K. Mak - Los Altos Hills CA, US

Assignee:

SanDisk Corporation - Sunnyvale CA

International Classification:

G11C016/06

US Classification:

36518922, 36518503, 36518512, 36518524

Abstract:

A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.

US Patent:

6967872, Nov 22, 2005

Filed:

Dec 18, 2001

Appl. No.:

10/025749

Inventors:

Khandker N. Quader - Sunnyvale CA, US
Khanh T. Nguyen - Sunnyvale CA, US
Feng Pan - San Jose CA, US
Long C. Pham - San Jose CA, US
Alexander K. Mak - Los Altos Hills CA, US

Assignee:

SanDisk Corporation - Sunnyvale CA

International Classification:

G11C016/04

US Classification:

36518522, 36518502, 36518503

Abstract:

A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.

US Patent:

7095654, Aug 22, 2006

Filed:

Sep 9, 2005

Appl. No.:

11/223709

Inventors:

Khandker N. Quader - Santa Clara CA, US
Khanh T. Nguyen - Sunnyvale CA, US
Feng Pan - San Jose CA, US
Long C. Pham - San Jose CA, US
Alexander K. Mak - Los Altos Hills CA, US

Assignee:

SanDisk Corporation - Milpitas CA

International Classification:

G11C 11/34

US Classification:

36518519, 36518518, 365196

Abstract:

A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.

US Patent:

7102924, Sep 5, 2006

Filed:

Jan 3, 2005

Appl. No.:

11/028906

Inventors:

Jian Chen - San Jose CA, US
Long C. Pham - San Jose CA, US
Alexander K. Mak - Los Altos CA, US

Assignee:

SanDisk Corporation - Milpitas CA

International Classification:

G11C 16/34

US Classification:

36518509, 36518502, 365200

Abstract:

Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

US Patent:

7295578, Nov 13, 2007

Filed:

Sep 12, 2001

Appl. No.:

09/954291

Inventors:

James D. Lyle - Santa Clara CA, US
Gyudong Kim - San Jose CA, US
Min-Kyu Kim - Cupertino CA, US
Paul Daniel Wolf - San Carlos CA, US
Long Van Pham - San Jose CA, US
Russel A. Martin - Menlo Park CA, US

International Classification:

H04J 3/06

US Classification:

370503, 348473

Abstract:

A communication system including a transmitter, a receiver, and a TMDS-like link, in which video data and auxiliary data are transmitted from the transmitter to the receiver, or in which video data are transmitted over the link from the transmitter to the receiver and auxiliary data are transmitted from the receiver to the transmitter (or from the transmitter to the receiver and also from receiver to the transmitter), a transmitter or receiver for use in such a system, and methods for sending auxiliary data and video data over such a link, synchronizing such auxiliary data with such video data, and generating clocks having frequency closely matching the rate at which the auxiliary data are transmitted. Typically, the auxiliary data include one or more streams of audio data. In some embodiments the transmitter transmits a video clock to the receiver over a video clock channel, at least one of the transmitter and receiver transmits at least one stream of auxiliary data to the other one of the transmitter and the receiver, and at least one of the transmitter and the receiver transmits over the video clock channel at least one auxiliary clock for the auxiliary data.

US Patent:

7301817, Nov 27, 2007

Filed:

Oct 27, 2005

Appl. No.:

11/260658

Inventors:

Yan Li - Milpitas CA, US
Long Pham - Milpitas CA, US

Assignee:

Sandisk Corporation - Milpitas CA

International Classification:

G11C 16/06

US Classification:

36518522, 36518503, 36518524, 36518528

Abstract:

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (V) that falls within a first Vdistribution or a higher, intermediate Vdistribution. Subsequently, the non-volatile storage elements with the first Vdistribution either remain there, or are programmed to a second Vdistribution, based on an upper page of data. The non-volatile storage elements with the intermediate Vdistribution are programmed to third and fourth Vdistributions. The non-volatile storage elements being programmed to the third Vdistribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth Vdistribution is initiated after one of the identified non-volatile storage elements transitions to the third Vdistribution from the intermediate Vdistribution.