Loren E Ralph

US Patent:

6819202, Nov 16, 2004

Filed:

Feb 13, 2003

Appl. No.:

10/364856

Inventors:

Loren Ralph - Citrus Heights CA

Assignee:

Scientific Components - Brooklyn NY

International Classification:

H01P 512

US Classification:

333125, 333128, 333136

Abstract:

A power splitter that has a small package size and low cross-talk noise. The power splitter includes a low temperature co-fired ceramic (LTTC) substrate with several layers. Electrical components such as transmission lines and resistors are integrated onto and within the LTCC substrate. The power splitter provides impedance matching and dividing functions. The LTCC substrate has counter rotating spiral shaped circuit lines and electrically conductive vias extending therethrough. The vias are used to connect the power splitter to an external printed circuit board. The vias are also used to make electrical connections between the layers of the LTCC substrate. The counter rotating circuit lines allow the power splitter to have a small package size and low cross-talk noise.

US Patent:

7030713, Apr 18, 2006

Filed:

Mar 8, 2004

Appl. No.:

10/794701

Inventors:

Loren Ralph - Citrus Heights CA, US

Assignee:

Scientific Components Corporation - Brooklyn NY

International Classification:

H01P 5/12
H01P 5/04

US Classification:

333111, 333116

Abstract:

A coupler that has a small package size and is adjustable after manufacturing. A coupler has a substrate with several dielectric layers and a top and bottom surface. A ground plane is located on the top surface and another ground plane is located on the bottom surface. A pair of coupled circuit lines are located within the substrate. Conductive vias extend between the layers and provide an electrical connection between the ground planes and the circuit lines. The top ground plane has several segments joined by links. The top ground plane can be modified to adjust the coupling between the coupled circuit lines by deleting one or more of the links. The links can be used to adjust the coupling after the coupler has been manufactured.

US Patent:

55348300, Jul 9, 1996

Filed:

Jan 3, 1995

Appl. No.:

8/368551

Inventors:

Loren E. Ralph - Citrus Heights CA

Assignee:

R F Prime Corporation - Sacramento CA

International Classification:

H01P 510
H01P 512
H01F 500
H01G 406

US Classification:

333128

Abstract:

A thick film balanced line multilayered structure having a substrate base of nominal 0. 025 or 0. 030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0. 003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use as a balun, a capacitor or an autotransformer, for use in microwave mixers, power splitters, filters, resonators and other microwave devices. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.

US Patent:

56406991, Jun 17, 1997

Filed:

May 14, 1996

Appl. No.:

8/645602

Inventors:

Loren E. Ralph - Citrus Heights CA

Assignee:

RF Prime - Sacramento CA

International Classification:

H04B 126

US Classification:

455326

Abstract:

A thick film balanced line multilayered structure having a substrate base of nominal 0. 025 or 0. 030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0. 003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use as a balun, a capacitor or an autotransformer, for use in microwave mixers, power splitters, filters, resonators and other microwave devices. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.

US Patent:

56401345, Jun 17, 1997

Filed:

May 14, 1996

Appl. No.:

8/645530

Inventors:

Loren E. Ralph - Citrus Heights CA

Assignee:

RF Prime - Sacramento CA

International Classification:

H01P 120

US Classification:

333202

Abstract:

A thick film balanced line multilayered structure having a substrate base of nominal 0. 025 or 0. 030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0. 003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use in microwave filters. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.

US Patent:

57450170, Apr 28, 1998

Filed:

Sep 17, 1996

Appl. No.:

8/718084

Inventors:

Loren E. Ralph - Citrus Heights CA

Assignee:

RF Prime Corporation - Sacramento CA

International Classification:

H01P 518
H03D 900
H03C 100
H04B 126

US Classification:

333116

Abstract:

A thick film construct and quadrature coupler for use in fabricating devices such as IQ modulators, IQ demodulators, vector modulators, image reject mixers, and multi-channel mixers. The thick film construct includes a dielectric substrate base with a metallized backside, a first metal trace deposited on the non-metallized side of the substrate base, a dielectric layer deposited over and around the first metal trace, and a second metal trace deposited on the dielectric layer. The first and second metal traces are aligned over their widths and lengths so to form a balanced transmission line structure where the first and second metal traces represent top and bottom lines in the balanced structure. This thick film structure serves as the foundation for microwave capacitors, mixers, and other transmission line based structures, including a quadrature coupler. The quadrature coupler which, in turn forms the basis for more complex devices, includes an input port, an isolated port, in-phase output port (I-port), and quadrature phase output port (Q-port).

US Patent:

56401329, Jun 17, 1997

Filed:

May 14, 1996

Appl. No.:

8/645512

Inventors:

Loren E. Ralph - Citrus Heights CA

Assignee:

RF Prime - Sacramento CA

International Classification:

H01P 512

US Classification:

333 5

Abstract:

A thick film balanced line multilayered structure having a substrate base of nominal 0. 025 or 0. 030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0. 003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use in microwave splitters. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.