Louis M Cook

US Patent:

51152860, May 19, 1992

Filed:

Feb 27, 1991

Appl. No.:

7/663056

Inventors:

Michael D. Camras - Sunnyvale CA
Louis W. Cook - Santa Clara CA
Virginia M. Robbins - Mountain View CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 3112
H01L 3116
H01L 3300

US Classification:

357 19

Abstract:

An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods.