Louis M Yang from 3249 Santa Sophia Way, Union City, CA 94587, age 45

view source

Location:

San Francisco Bay Area

Industry:

Internet

Method Of Depositing Low K Barrier Layers
view source
US Patent:

6759327, Jul 6, 2004
Filed:

Nov 13, 2001
Appl. No.:

10/010950
Inventors:

Li-Qun Xia - Santa Clara CA
Ping Xu - Fremont CA
Louis Yang - San Francisco CA
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

H01L 214763
US Classification:

438643, 438637, 438672
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method Of Depositing A Low K Dielectric Barrier Film For Copper Damascene Application
view source
US Patent:

6849562, Feb 1, 2005
Filed:

Mar 4, 2002
Appl. No.:

10/092203
Inventors:

Chi-I Lang - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2131
H01L 21469
US Classification:

438778, 438780, 438786, 438788, 438789, 438790, 438791, 438792, 438793, 438794, 257758, 257759, 257760
Abstract:

A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NRRR, wherein R, R, and Rare selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

Method Of Depositing Low K Barrier Layers
view source
US Patent:

7125813, Oct 24, 2006
Filed:

Apr 20, 2004
Appl. No.:

10/828441
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/31
US Classification:

438778, 257E21274
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method Of Depositing Low K Barrier Layers
view source
US Patent:

7319068, Jan 15, 2008
Filed:

Oct 2, 2006
Appl. No.:

11/537928
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/31
US Classification:

438638, 438623, 438789, 257E21166, 257E21274, 257E21277, 257E21576
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method For Depositing A Low K Dielectric Film (K<3.5) For Hard Mask Application
view source
US Patent:

20030113995, Jun 19, 2003
Filed:

Mar 12, 2002
Appl. No.:

10/096503
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Wen Zhu - Sunnyvale CA, US
Assignee:

Applied Materials, Inc.
International Classification:

H01L021/4763
H01L021/44
H01L023/053
H01L023/12
H01L023/48
H01L023/52
US Classification:

438/638000, 438/637000, 438/672000, 257/700000, 257/701000, 257/758000, 257/774000
Abstract:

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Methods For Depositing Dielectric Material
view source
US Patent:

20030194496, Oct 16, 2003
Filed:

Apr 11, 2002
Appl. No.:

10/122106
Inventors:

Ping Xu - Fremont CA, US
Li-Qun Xia - Santa Clara CA, US
Huong Nguyen - San Ramon CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc.
International Classification:

C23C016/00
B05D003/02
US Classification:

427/255280, 427/569000, 427/372200
Abstract:

Methods are provided for depositing a low dielectric constant material. In one aspects, a method is provided for depositing a low dielectric constant material including introducing a processing gas comprising hydrogen and an oxygen-containing organosilicon compound, an oxygen-free organosilicon compound, or combinations thereof, to a substrate surface in a processing chamber and reacting the processing gas at processing conditions to deposit the low dielectric constant material on the substrate surface, wherein the low k dielectric material comprises at least silicon and carbon. The processing gas may further include an inert gas, a meta-stable compound, or combinations thereof. The method may further include treating the low dielectric constant material with a hydrogen containing plasma, annealing the deposited low dielectric constant material, or combinations thereof.