Louis Daniel Yang

US Patent:

6759327, Jul 6, 2004

Filed:

Nov 13, 2001

Appl. No.:

10/010950

Inventors:

Li-Qun Xia - Santa Clara CA
Ping Xu - Fremont CA
Louis Yang - San Francisco CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01L 214763

US Classification:

438643, 438637, 438672

Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

US Patent:

6849562, Feb 1, 2005

Filed:

Mar 4, 2002

Appl. No.:

10/092203

Inventors:

Chi-I Lang - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131
H01L 21469

US Classification:

438778, 438780, 438786, 438788, 438789, 438790, 438791, 438792, 438793, 438794, 257758, 257759, 257760

Abstract:

A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NRRR, wherein R, R, and Rare selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

US Patent:

7125813, Oct 24, 2006

Filed:

Apr 20, 2004

Appl. No.:

10/828441

Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438778, 257E21274

Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

US Patent:

7319068, Jan 15, 2008

Filed:

Oct 2, 2006

Appl. No.:

11/537928

Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438638, 438623, 438789, 257E21166, 257E21274, 257E21277, 257E21576

Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

US Patent:

20030113995, Jun 19, 2003

Filed:

Mar 12, 2002

Appl. No.:

10/096503

Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Wen Zhu - Sunnyvale CA, US

Assignee:

Applied Materials, Inc.

International Classification:

H01L021/4763
H01L021/44
H01L023/053
H01L023/12
H01L023/48
H01L023/52

US Classification:

438/638000, 438/637000, 438/672000, 257/700000, 257/701000, 257/758000, 257/774000

Abstract:

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

US Patent:

20030194496, Oct 16, 2003

Filed:

Apr 11, 2002

Appl. No.:

10/122106

Inventors:

Ping Xu - Fremont CA, US
Li-Qun Xia - Santa Clara CA, US
Huong Nguyen - San Ramon CA, US
Louis Yang - San Francisco CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C23C016/00
B05D003/02

US Classification:

427/255280, 427/569000, 427/372200

Abstract:

Methods are provided for depositing a low dielectric constant material. In one aspects, a method is provided for depositing a low dielectric constant material including introducing a processing gas comprising hydrogen and an oxygen-containing organosilicon compound, an oxygen-free organosilicon compound, or combinations thereof, to a substrate surface in a processing chamber and reacting the processing gas at processing conditions to deposit the low dielectric constant material on the substrate surface, wherein the low k dielectric material comprises at least silicon and carbon. The processing gas may further include an inert gas, a meta-stable compound, or combinations thereof. The method may further include treating the low dielectric constant material with a hydrogen containing plasma, annealing the deposited low dielectric constant material, or combinations thereof.

US Patent:

20190059440, Feb 28, 2019

Filed:

Aug 22, 2018

Appl. No.:

16/108161

Inventors:

- Long Beach CA, US
Louis Y. Yang - Irvine CA, US

International Classification:

A24C 5/44
A24C 5/46
A24C 5/47

Abstract:

A system for rolling one or more cigarettes includes a rolling body and a filter coupleable to the rolling body. The rolling body includes one or more indicators spaced in accordance with one or more sizes of rolling paper extendable about the rolling body. The filter is coupleable to the rolling body such that the rolling paper is extendable about the filter when the rolling paper is extended about the rolling body.