Louis Yang from Cupertino, CA, age 35

Method Of Depositing Low K Barrier Layers
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US Patent:

6759327, Jul 6, 2004
Filed:

Nov 13, 2001
Appl. No.:

10/010950
Inventors:

Li-Qun Xia - Santa Clara CA
Ping Xu - Fremont CA
Louis Yang - San Francisco CA
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

H01L 214763
US Classification:

438643, 438637, 438672
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method Of Depositing A Low K Dielectric Barrier Film For Copper Damascene Application
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US Patent:

6849562, Feb 1, 2005
Filed:

Mar 4, 2002
Appl. No.:

10/092203
Inventors:

Chi-I Lang - Sunnyvale CA, US
Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2131
H01L 21469
US Classification:

438778, 438780, 438786, 438788, 438789, 438790, 438791, 438792, 438793, 438794, 257758, 257759, 257760
Abstract:

A method for depositing a low k dielectric film comprising silicon, carbon, and nitrogen is provided. The low k dielectric film is formed by a gas mixture comprising a silicon source, a carbon source, and NRRR, wherein R, R, and Rare selected from the group consisting of alkyl and phenyl groups. The low k dielectric film may be used as a barrier layer, an etch stop, an anti-reflective coating, or a hard mask.

Method Of Depositing Low K Barrier Layers
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US Patent:

7125813, Oct 24, 2006
Filed:

Apr 20, 2004
Appl. No.:

10/828441
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/31
US Classification:

438778, 257E21274
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method Of Depositing Low K Barrier Layers
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US Patent:

7319068, Jan 15, 2008
Filed:

Oct 2, 2006
Appl. No.:

11/537928
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 21/31
US Classification:

438638, 438623, 438789, 257E21166, 257E21274, 257E21277, 257E21576
Abstract:

A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Method For Depositing A Low K Dielectric Film (K<3.5) For Hard Mask Application
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US Patent:

20030113995, Jun 19, 2003
Filed:

Mar 12, 2002
Appl. No.:

10/096503
Inventors:

Li-Qun Xia - Santa Clara CA, US
Ping Xu - Fremont CA, US
Louis Yang - San Francisco CA, US
Wen Zhu - Sunnyvale CA, US
Assignee:

Applied Materials, Inc.
International Classification:

H01L021/4763
H01L021/44
H01L023/053
H01L023/12
H01L023/48
H01L023/52
US Classification:

438/638000, 438/637000, 438/672000, 257/700000, 257/701000, 257/758000, 257/774000
Abstract:

A method for depositing a silicon oxycarbide hard mask on a low k dielectric layer is provided. Substrates containing a silicon oxycarbide hard mask on a low k dielectric layer are also disclosed. The silicon oxycarbide hard mask may be formed by a processing gas comprising a siloxane.

Methods For Depositing Dielectric Material
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US Patent:

20030194496, Oct 16, 2003
Filed:

Apr 11, 2002
Appl. No.:

10/122106
Inventors:

Ping Xu - Fremont CA, US
Li-Qun Xia - Santa Clara CA, US
Huong Nguyen - San Ramon CA, US
Louis Yang - San Francisco CA, US
Assignee:

Applied Materials, Inc.
International Classification:

C23C016/00
B05D003/02
US Classification:

427/255280, 427/569000, 427/372200
Abstract:

Methods are provided for depositing a low dielectric constant material. In one aspects, a method is provided for depositing a low dielectric constant material including introducing a processing gas comprising hydrogen and an oxygen-containing organosilicon compound, an oxygen-free organosilicon compound, or combinations thereof, to a substrate surface in a processing chamber and reacting the processing gas at processing conditions to deposit the low dielectric constant material on the substrate surface, wherein the low k dielectric material comprises at least silicon and carbon. The processing gas may further include an inert gas, a meta-stable compound, or combinations thereof. The method may further include treating the low dielectric constant material with a hydrogen containing plasma, annealing the deposited low dielectric constant material, or combinations thereof.

Methods And Systems For Rolling One Or More Cigarettes
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US Patent:

20190059440, Feb 28, 2019
Filed:

Aug 22, 2018
Appl. No.:

16/108161
Inventors:

- Long Beach CA, US
Louis Y. Yang - Irvine CA, US
International Classification:

A24C 5/44
A24C 5/46
A24C 5/47
Abstract:

A system for rolling one or more cigarettes includes a rolling body and a filter coupleable to the rolling body. The rolling body includes one or more indicators spaced in accordance with one or more sizes of rolling paper extendable about the rolling body. The filter is coupleable to the rolling body such that the rolling paper is extendable about the filter when the rolling paper is extended about the rolling body.