Lu Ming Yang

US Patent:

20180114695, Apr 26, 2018

Filed:

Jun 22, 2015

Appl. No.:

15/573458

Inventors:

- Santa Clara CA, US
Lu YANG - Hillsboro OR, US
Joodong PARK - Portland OR, US
Chia-Hong JAN - Portland OR, US

International Classification:

H01L 21/225
H01L 29/66
H01L 29/06
H01L 29/78
H01L 27/088

Abstract:

Dual height glass is described for doping a fin of a field effect transistor structure in an integrated circuit. In one example, a method includes applying a glass layer over a fin of a FinFET structure, the fin having a source/drain region and a gate region, applying a polysilicon layer over the gate region, removing a portion of the glass layer from the source/drain region after applying the polysilicon, and thermally annealing the glass to drive dopants into the fin, and applying an epitaxial layer over the source/drain region.