Lu L Yang

age ~62

from Hillsboro, OR

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Lu Yang Phones & Addresses

Hillsboro, OR

Resumes

Revenue Maintainer

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Work:

Mta Jun 2010 - Apr 2011
Signal Maintainer
Mta Jun 2010 - Apr 2011
Revenue Maintainer

Skills:

Transportation
Troubleshooting

Principal Engineer And Engineering Manager At Intel Corp

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Location:

19750 northwest Phillips Rd, Hillsboro, OR 97124

Industry:

Semiconductors

Work:

Intel Corporation
Principal Engineer and Engineering Manager at Intel Corp

Education:

University of California, Davis 2003 - 2007
Doctorates, Doctor of Philosophy University of Science and Technology of China 1999 - 2003
Bachelors, Bachelor of Science

Skills:

Engineering
Chemical Engineering
Process Engineering
Energy
Process Control
Aspen Hysys
Instrumentation
Project Engineering
Sustainability
Hazop
Mechanical Engineering
Continuous Improvement
Electrical Engineering
Petrochemical
P&Id
Epc
Feed
Process Safety
Management
Gas
Renewable Energy
Calculations
Refinery
Commissioning
Piping
Process Simulation

Lu Yang

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Location:

United States

Lu Yang

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Location:

United States

Lawyers & Attorneys

Lu Yang - Lawyer

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ISLN:

923526756

Admitted:

1997

Isbn (Books And Publications)

Automated Deduction in Geometry: 2nd International Workshop, Adg'98, Beijing, China, August 1-3, 1998, Pr Oceedings

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Author
Lu Yang

ISBN #
3540666729

Name / Title

Company / Classification

Phones & Addresses

Lu Yang

SHANDONG RUIPU, INC

Us Patents

Dual Height Glass For Finfet Doping
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US Patent:

20180114695, Apr 26, 2018
Filed:

Jun 22, 2015
Appl. No.:

15/573458
Inventors:

- Santa Clara CA, US
Lu YANG - Hillsboro OR, US
Joodong PARK - Portland OR, US
Chia-Hong JAN - Portland OR, US
International Classification:

H01L 21/225
H01L 29/66
H01L 29/06
H01L 29/78
H01L 27/088
Abstract:

Dual height glass is described for doping a fin of a field effect transistor structure in an integrated circuit. In one example, a method includes applying a glass layer over a fin of a FinFET structure, the fin having a source/drain region and a gate region, applying a polysilicon layer over the gate region, removing a portion of the glass layer from the source/drain region after applying the polysilicon, and thermally annealing the glass to drive dopants into the fin, and applying an epitaxial layer over the source/drain region.