Marion F Ellis

US Patent:

6631551, Oct 14, 2003

Filed:

Jun 26, 1998

Appl. No.:

09/105611

Inventors:

Philip Harbaugh Bowles - Carmel IN
Washington Morris Mobley - Carmel IN
Richard Dixon Parker - Tipton IN
Marion Edmond Ellis - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H01C 1706

US Classification:

29620, 29846, 29848, 338258, 338308

Abstract:

A process for forming stable integrated resistors ( ) and capacitors ( ) on organic substrates ( ). The resistors ( ) and capacitors ( ) are capable of a wide range of resistance and capacitance values, yet can be processed in a manner that does not detrimentally effect the organic substrate ( ) or entail complicated processing. The method generally entails the use of thick-film materials usually of the types used to form resistors and capacitors on ceramic substrates. The thick-film materials are applied to an electrically-conductive foil ( ) and then heated to bond the thick-film material to the foil ( ) and form a solid resistive or capacitive mass ( ). The foil ( ) is then laminated to an organic substrate ( ), such that the resistive/capacitive mass ( ) is attached to and preferably embedded in the organic substrate ( ). Finally, the foil ( ) is etched to form at least one of two terminals that contact the resistive/capacitive mass ( ) and thereby complete the passive electrical component ( ). Resistors ( ) can also be formed of polymer thick-film (PTF) inks, in which case the PTF ink is cured on the foil ( ) for an extended period at a temperature sufficient to completely cure the ink prior to laminating the foil ( ) to the organic substrate ( ).

US Patent:

6180164, Jan 30, 2001

Filed:

Oct 26, 1998

Appl. No.:

9/178758

Inventors:

Marion Edmond Ellis - Kokomo IN
Philip Harbaugh Bowles - Carmel IN
Washington Morris Mobley - Carmel IN

Assignee:

Delco Electronics Corporation - Kokomo IN

International Classification:

B05D 512
H01C 1700

US Classification:

427101

Abstract:

A method for forming a ruthenium-based thick-film resistor having copper terminations, in which the thick-film resistor is fired in a non-oxidizing atmosphere so as not to oxidize the copper terminations yet without reducing the thick-film resistor to metallic ruthenium. A ruthenium-based thick-film resistor ink having a matrix material and an organic vehicle is deposited on a copper layer that will form the terminations for the thick-film resistor formed by firing the ink. The organic vehicle of the ink is then burned out at a temperature of less than 350. degree. C. in an oxidizing atmosphere, such as air. Thereafter, the ink is fired in a non-oxidizing atmosphere (e. g. , nitrogen) at a temperature sufficient to sinter the matrix material and yield a ruthenium-based thick-film resistor with copper terminations formed by the copper layer.

US Patent:

61500410, Nov 21, 2000

Filed:

Jun 25, 1999

Appl. No.:

9/344046

Inventors:

Frans Peter Lautzenhiser - Noblesville IN
Joel Franklin Downey - Kokomo IN
Marion Edmond Ellis - Kokomo IN

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

B32B 1501
B05D 512

US Classification:

428673

Abstract:

16 A thick-film circuit (10) includes an electrically conductive substrate (12), such as stainless steel, and a first layer of a gold-rich conductor (15) applied directly thereon. The gold layer is fired in a non-oxidizing atmosphere, such as nitrogen, to ensure a solid mechanical and electrical connection between the gold and the substrate. A next layer of a silver composition (20) containing a first proportion of silver to a conductive metal is directly applied to the gold layer (15). Preferably, the composition (20) includes palladium in equal parts with the silver to achieve a secure mechanical and electrical contact with the gold layer with a minimum resistivity. A silver-rich layer (23) is then applied directly onto the intermediate layer. This silver-rich layer (23) is a composition of silver and the conductive metal in a second proportion greater than the first proportion. In one embodiment, this second proportion is three parts silver to one part palladium by weight.

US Patent:

58983597, Apr 27, 1999

Filed:

Dec 19, 1997

Appl. No.:

8/994113

Inventors:

Marion Edmond Ellis - Kokomo IN

Assignee:

Delco Electronics Corp. - Kokomo IN

International Classification:

H01C 1010

US Classification:

338 47

Abstract:

A thick-film strain-sensing structure for a media-compatible, high-pressure sensor. The strain-sensing structure generally includes a metal diaphragm, at least one electrical-insulating layer on the diaphragm, an interface layer on the electrical-insulating layer, and at least one thick-film piezoresistor on the interface layer for sensing deflection of the diaphragm. The interface layer and the electrical-insulating layers are preferably formed by thick-film processing, as done for the piezoresistors. For compatibility with the metal diaphragm, the electrical-insulating layer has a CTE near that of the diaphragm. The interface layer is formulated to inhibit and control diffusion of the electrical-insulating layers into the piezoresistors. For this purpose, the interface layer is formed from a composition that contains, in addition to a suitable organic media, alumina, zinc oxide, and at least one glass frit mixture comprising lead oxide, a source of boron oxide such as boric acid, silica and alumina. Additional constituents of the interface layer preferably include titania, cupric oxide, manganese carbonate as a source for manganese monoxide, and cobalt carbonate as a source of cobalt oxide.

US Patent:

6233817, May 22, 2001

Filed:

Jan 17, 1999

Appl. No.:

9/232951

Inventors:

Marion Edmond Ellis - Kokomo IN
Frans Peter Lautzenhiser - Noblesville IN
Anthony John Stankavich - Kokomo IN
Philip Harbaugh Bowles - Carmel IN
Washington Morris Mobley - Phoenix AZ

Assignee:

Delphi Technologies, Inc. - Troy MI

International Classification:

H05K 330

US Classification:

29832

Abstract:

A hybrid circuit structure that includes a metal substrate, an inorganic electrical insulator layer and at least one inorganic thick-film passive circuit element, such as a thick-film resistor, capacitor or conductor. An interface layer is provided between the insulator layer and the circuit element to prevent the detrimental effects of interlayer diffusion. The composition of the interface layer is selected to prevent the diffusion of constituents from the inorganic insulator layer, and to have a CTE near that of the circuit element to reduce thermal fatigue. As a result, the passive circuit element can be formed of essentially any one of a number of conventional inorganic thick-film materials that are widely used on alumina substrates.

US Patent:

54633672, Oct 31, 1995

Filed:

Oct 14, 1993

Appl. No.:

8/136058

Inventors:

Marion E. Ellis - Kokomo IN

Assignee:

Delco Electronics Corp. - Kokomo IN

International Classification:

H01C 1012

US Classification:

338308

Abstract:

Thick film resistor ink compositions and a method for formulating and processing such inks are provided for producing thick film resistors having highly repeatable and stable resistance characteristics. The inks are specifically formulated to produce resistors whose resistivities are determined in part by the sintering temperature employed in the processing of the resistors. The processing of the inks involves using infrared radiation techniques to rapidly sinter the inks at highly controllable temperatures, so as to enable the resistance of a resistor to be predictably altered by the sintering operation, such that in-process adjustments can be made to the processing method. Thick film resistors produced in accordance with this invention are characterized by high stability to environmental influences and low TCR values on the order of about. +-. 50 ppm/. degree. C.

US Patent:

56212402, Apr 15, 1997

Filed:

Sep 5, 1995

Appl. No.:

8/523580

Inventors:

Marion E. Ellis - Kokomo IN

Assignee:

Delco Electronics Corp. - Kokomo IN

International Classification:

H01L 2704

US Classification:

257536

Abstract:

A novel thick film resistor configuration and a method for fabricating thick film resistors, by which such resistors can be processed to achieve targeted electrical properties in an as-fired condition. The configuration and method of this invention involve creating a thick film resistor in the form of a series of short resistors whose combined resistance values approximately equal the predetermined resistance value required of the thick film resistor by its hybrid electronic circuit, yet with the use of minimal post-firing trimming. Such a configuration and method enable the production of thick film resistors from the same ink composition but with significantly different aspect ratios, yet which exhibit minimal differences between TCR values. Consequently, thick film resistors configured and fabricated in accordance with this invention are characterized by enhanced production throughput, repeatability, and reliability.

US Patent:

60227567, Feb 8, 2000

Filed:

Jul 31, 1998

Appl. No.:

9/127291

Inventors:

Douglas Ray Sparks - Kokomo IN
Andres Deogracias Viduya - Carmel IN
Lewis Henry Little - Peru IN
Marion Edmond Ellis - Kokomo IN

Assignee:

Delco Electronics Corp. - Kokomo IN

International Classification:

H01L 2100

US Classification:

438 53

Abstract:

A sensor (10) having polysilicon strain-sensing elements (20) on a metal diaphragm (16). A thick-film insulating layer (18) covers the metal diaphragm (16), and thin-film polysilicon resistive elements (20) are formed on the thick-film insulating layer (18). Thick-film conductors (22) are formed on the thick-film insulating layer (18) and contact the thin-film polysilicon resistive elements (20) to form electrical interconnects to the resistive elements (20). The thick-film conductors (22) preferably contain silicon in order to reduce diffusion of silicon from the polysilicon resistive elements (20). The thick-film insulating layer (18) may be made up of a number of individual thick-film layers, the uppermost of which is stable and nonreactive with the thin-film polysilicon resistive elements (20) and the thick-film conductors (22) at temperatures of at least 600. degree. C. A passivation layer (24) overlies the thin-film polysilicon resistive elements (20) and the thick-film conductors (22). The sensor (10) can be made sufficiently rugged to be used as a structural member of a fluid-containing vessel.