Mark S Devito

US Patent:

6663785, Dec 16, 2003

Filed:

Mar 6, 2002

Appl. No.:

10/092018

Inventors:

Zhe Huang - Fremont CA
Mark A. Devito - Vancouver WA
Mike P. Grimshaw - Vancouver WA
Paul A. Crump - Portland OR
Jason N. Farmer - Seattle WA
Mark R. Pratt - Seattle WA

Assignee:

nLight Photonics Corporation - Seattle WA

International Classification:

B44C 122

US Classification:

216 2, 216 24, 372 23, 372 46, 372 50, 372 69, 438689

Abstract:

Embodiments of the present invention are directed to method of fabrication of a broadband emitter array. Embodiments of the present invention may grown a first set of emitters possessing a first quantum well characteristic (e. g. , quantum well thickness or composition). A portion of the first set of emitters is removed by etching. In place of the removed emitters, a second set of emitters is regrown with said second set of emitters possessing a different quantum well characteristic. By fabricating the emitters sets in this manner, a unitary emitter array may be fabricated that possesses an increased bandwidth, e. g. , the first and second sets of emitters may be associated with different center wavelengths. Embodiments of the present invention may utilize emitter arrays fabricated in this manner in, for example, incoherently beam combined (IBC) lasers and in Raman amplifier systems.

US Patent:

20060023763, Feb 2, 2006

Filed:

Jul 28, 2004

Appl. No.:

10/902224

Inventors:

Jason Farmer - Vancouver WA, US
Mark DeVito - Vancouver WA, US
Zhe Huang - Vancouver WA, US
Paul Crump - Portland OR, US
Michael Grimshaw - Vancouver WA, US
Prabhuram Thiagarajan - Camas WA, US
Weimin Dong - Vancouver WA, US
Jun Wang - Vancouver WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 5/00

US Classification:

372045010, 372046010

Abstract:

A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.

US Patent:

20070053396, Mar 8, 2007

Filed:

Aug 24, 2005

Appl. No.:

11/212420

Inventors:

Mark DeVito - Vancouver WA, US
Paul Crump - Portland OR, US
Jun Wang - Vancouver WA, US
Weimin Dong - Vancouver WA, US
Michael Grimshaw - Vancouver WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 3/14

US Classification:

372039000

Abstract:

A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.

US Patent:

20070235839, Oct 11, 2007

Filed:

Oct 7, 2005

Appl. No.:

11/246346

Inventors:

Mark DeVito - Vancouver WA, US
Paul Crump - Portland OR, US
Jun Wang - Vancouver WA, US
Weimin Dong - Vancouver WA, US
Michael Grimshaw - Vancouver WA, US
Christopher Ebert - Washougal WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01L 29/20
H01L 21/00

US Classification:

257615000, 438046000, 438093000

Abstract:

A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlGaAs is provided, as well as the resultant device. In general, each thick AlGaAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlGaAsPlayer of approximately the same thickness and with the same concentrations of Al and Ga. The AlGaAsPlayer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.

US Patent:

20090168826, Jul 2, 2009

Filed:

Mar 26, 2008

Appl. No.:

12/079475

Inventors:

Jason Nathaniel Farmer - Vancouver WA, US
Mark Andrew DeVito - Vancouver WA, US
Zhe Huang - Vancouver WA, US
Paul Andrew Crump - Berlin, DE
Michael Peter Grimshaw - Vancouver WA, US
Prabhuram Thiagarajan - Tucson AZ, US
Weimin Dong - Vancouver WA, US
Jun Wang - Camas WA, US

Assignee:

nLight Photonics Corporation - Vancouver WA

International Classification:

H01S 5/00

US Classification:

372 45012

Abstract:

A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.

US Patent:

6420732, Jul 16, 2002

Filed:

Jun 26, 2000

Appl. No.:

09/604546

Inventors:

Hsing Kung - Los Altos Hills CA
Mark Devito - Vancouver WA
Chin-Wang Tu - Cupertino CA

Assignee:

Luxnet COrporation - Fremont CA

International Classification:

H01L 2715

US Classification:

257 79, 257 85, 438 22

Abstract:

Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed on the substrate, an active region formed on the first confining layer, a second confining layer of a second conductivity type formed on the active region, and a window layer of the second conductivity type formed on the second confining layer. A contact layer of the second conductivity type is formed on the window layer for making ohmic contact, a conductive oxide layer is formed on the contact layer, and a second electrode is formed on the conductive oxide layer. The conductive oxide layer typically includes a central portion located below the second top electrode, which extends into the LED structure, typically beyond the contact layer and into the window layer, or even beyond the window layer, such as into the second confining layer. The improved LED structures preferably include a higher resistive or reverse biased pattern, typically built on or within the substrate, approximately below the second electrode, to further assist the current blocking function.