Mark R Levy

US Patent:

7037824, May 2, 2006

Filed:

May 13, 2004

Appl. No.:

10/844533

Inventors:

Lloyd G. Burrell - Poughkeepsie NY, US
Jeffrey P. Gambino - Westford VT, US
Hyun Koo Lee - LaGrangeville NY, US
Mark D. Levy - Essex Junction VT, US
Baozhen Li - South Burlington VT, US
Stephen E. Luce - Underhill VT, US
Thomas L. McDevitt - Underhill VT, US
Anthony K. Stamper - Williston VT, US
Kwong Hon Wong - Wappingers Falls NY, US
Sally J. Yankee - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/4763

US Classification:

438627, 438629, 438643, 438648, 438653, 438687

Abstract:

Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

US Patent:

7087997, Aug 8, 2006

Filed:

Mar 12, 2001

Appl. No.:

09/805027

Inventors:

Lloyd G. Burrell - Poughkeepsie NY, US
Jeffrey P. Gambino - Westford VT, US
Hyun Koo Lee - LaGrangeville NY, US
Mark D. Levy - Essex Junction VT, US
Baozhen Li - South Burlington VT, US
Stephen E. Luce - Underhill VT, US
Thomas L. McDevitt - Underhill VT, US
Anthony K. Stamper - Williston VT, US
Kwong Hon Wong - Wappingers Falls NY, US
Sally J. Yankee - Underhill VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 23/48
H01L 23/52
H01L 29/40

US Classification:

257750, 257761, 257762, 257763, 257764, 257770

Abstract:

Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.