Mark C Lloyd

US Patent:

20020029961, Mar 14, 2002

Filed:

May 29, 2001

Appl. No.:

09/867780

Inventors:

Yezdi Dordi - Palo Alto CA, US
Donald Olgado - Palo Alto CA, US
Ratson Morad - Palo Alto CA, US
Peter Hey - Sunnyvale CA, US
Mark Denome - San Jose CA, US
Michael Sugarman - San Francisco CA, US
Mark Lloyd - Fremont CA, US
Anna Lloyd - Fremont CA, US
Joseph Stevens - San Jose CA, US
Dan Marohl - San Jose CA, US
Ho Shin - Mountain View CA, US
Eugene Ravinovich - Fremont CA, US
Robin Cheung - Cupertino CA, US
Ashok Sinha - Palo Alto CA, US
Avi Tepman - Cupertino CA, US
Dan Carl - Pleasanton CA, US
George Birkmaier - Cupertino CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C25D017/00
C25D007/12
C25D021/12

US Classification:

204/198000, 204/278000, 204/228100, 204/212000, 204/275100, 204/274000, 204/252000, 204/263000, 204/266000, 204/276000, 204/264000, 204/292000, 205/157000

Abstract:

The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.

US Patent:

20040084301, May 6, 2004

Filed:

Oct 20, 2003

Appl. No.:

10/690033

Inventors:

Yezdi Dordi - Palo Alto CA, US
Donald Olgado - Palo Alto CA, US
Ratson Morad - Palo Alto CA, US
Peter Hey - Sunnyvale CA, US
Mark Denome - San Jose CA, US
Michael Sugarman - San Francisco CA, US
Mark Lloyd - Fremont CA, US
Anna Lloyd - Fremont CA, US
Joseph Stevens - San Jose CA, US
Dan Marohl - San Jose, CA
Ho Shin - Mountai View CA, US
Eugene Ravinovich - Fremont CA, US
Robin Cheung - Cupertino CA, US
Ashok Sinha - Palo Alto CA, US
Avi Tepman - Cupertino CA, US
Dan Carl - Pleasanton CA, US
George Birkmaier - Cupertino CA, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

C25D017/00

US Classification:

204/252000, 204/263000

Abstract:

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

US Patent:

20060246690, Nov 2, 2006

Filed:

Jun 27, 2006

Appl. No.:

11/476945

Inventors:

Yezdi Dordi - Palo Alto CA, US
Donald Olgado - Palo Alto CA, US
Ratson Morad - Palo Alto CA, US
Peter Hey - Sunnyvale CA, US
Mark Denome - San Jose CA, US
Michael Sugarman - San Francisco CA, US
Mark Lloyd - Fremont CA, US
Anna Lloyd - Fremont CA, US
Joseph Stevens - San Jose CA, US
Dan Marohl - San Jose CA, US
Ho Shin - Mountain View CA, US
Eugene Ravinovich - Fremont CA, US
Robin Cheung - Cupertino CA, US
Ashok Sinha - Palo Alto CA, US
Avi Tepman - Cupertino CA, US
Dan Carl - Pleasanton CA, US
George Birkmaier - Cupertino CA, US

International Classification:

H01L 21/20
B05D 3/00
B05C 13/00
B05C 13/02

US Classification:

438478000, 118500000, 118503000, 427294000, 427299000, 427300000

Abstract:

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

US Patent:

62908650, Sep 18, 2001

Filed:

Nov 30, 1998

Appl. No.:

9/201566

Inventors:

Mark Lloyd - Fremont CA
Ashok K. Sinha - Palo Alto CA
Sergio Edelstein - Los Gatos CA
Michael Sugarman - San Francisco CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23F 100

US Classification:

216 92

Abstract:

The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.

US Patent:

56584423, Aug 19, 1997

Filed:

Mar 7, 1996

Appl. No.:

8/612053

Inventors:

James Van Gogh - Sunnyvale CA
Fernand Dorleans - San Francisco CA
Christopher Hagerty - Pleasanton CA
Mark Lloyd - Fremont CA
Howard Tang - San Jose CA
R. Steve West - Boulder Creek CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1434

US Classification:

20429812

Abstract:

The disadvantages heretofore associated with the prior art are overcome by the present invention of an improved target for a physical deposition (PVD) system. The improved target has a portion of the target side wall the overhangs and shadows the side wall of the target thus preventing material from depositing on the edge. To further reduce contaminant generation, the improved target is combined with an improved dark space shield having a first end and a second end, where the second end conventionally supports a collimator and the first end has an inner surface that is substantially vertical.