Mark M Markovsky

US Patent:

20130279066, Oct 24, 2013

Filed:

Apr 22, 2013

Appl. No.:

13/867515

Inventors:

Dmitry Lubomirsky - Cupertino CA, US
Jennifer Y. Sun - Mountain View CA, US
Mark Markovsky - San Jose CA, US
Konstantin Makhratchev - Fremont CA, US
Samer Banna - San Jose CA, US

International Classification:

H02N 13/00

US Classification:

361234

Abstract:

Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

US Patent:

20190090338, Mar 21, 2019

Filed:

Sep 20, 2017

Appl. No.:

15/710667

Inventors:

- Santa Clara CA, US
Haitao WANG - Fremont CA, US
Philip Allan KRAUS - San Jose CA, US
Vijay D. PARKHE - San Jose CA, US
Daniel DISTASO - Merrimac MA, US
Christopher A. ROWLAND - Rockport MA, US
Mark MARKOVSKY - San Jose CA, US
Robert CASANOVA - San Jose CA, US

International Classification:

H05H 1/34
H05B 7/18
H02N 13/00

Abstract:

Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.

US Patent:

20160042961, Feb 11, 2016

Filed:

Aug 6, 2014

Appl. No.:

14/453023

Inventors:

- Santa Clara CA, US
Hamid Tavassoli - Cupertino CA, US
Kenneth S. Collins - San Jose CA, US
Kartik Ramaswamy - San Jose CA, US
James D. Carducci - Sunnyvale CA, US
Shahid D. Rauf - Pleasanton CA, US
Richard Fovell - San Jose CA, US
Fernando M. Silveira - Livermore CA, US
Mark Markovsky - San Jose CA, US

International Classification:

H01L 21/3065
H01J 37/32

Abstract:

A plasma reactor has an electron beam source as a plasma source and a rotation motor coupled to rotate the workpiece support about a rotation axis that is transverse to an emission path of said electron beam source.