Mark L O'Neill from Papillion, NE, age 44

Resumes

Founder

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Location:

Omaha, NE

Industry:

Religious Institutions

Work:

Mark Steven O'neill Publishing Sep 2005 - Jan 2012
Founder
Go-Mommy Medjugorje Foundation Sep 2005 - Jan 2012
Founder
Asbestos Workers Local 39 Omaha Jun 1985 - Jan 2004
Trustee, E-Board Member, Recording Secretary

Education:

Creighton University 1988 - 1990
University of Nebraska at Omaha 1972 - 1980
Bachelors, Bachelor of Science In Business Administration, Management Creighton Preparatory School

Member Board Of Directors

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Location:

Washington, DC

Industry:

Higher Education

Work:

M.E. O'Neill Consulting, LLC since Feb 2013
President
CACI International Inc - Vienna, VA Feb 2012 - Feb 2013
Senior Vice President
L-3 MPRI - Alexandria, Virginia Jul 2008 - Jan 2012
Senior Vice President
U.S. Army 1978 - 2008
Brigadier General, U.S. Army (retired)

Education:

U.S. Army War College 1997 - 1998
British Ministry of Defence Chinese Language School 1986 - 1987
Naval Postgraduate School 1985 - 1986
MA, National Security United States Defense Language Institute 1984 - 1985
United States Military Academy at West Point 1974 - 1978
Bachelor of Science, General Engineering

Skills:

National Security
Defense
Military
Military Experience
Army
Command
Security Clearance
Dod
Program Management
Operational Planning
Intelligence
Government Contracting
Leadership
Military Operations
Afghanistan
Organizational Leadership
Government
Intelligence Analysis
Leadership Development
Special Operations
Security Management
Defence
Risk Assessment
Tactics
Top Secret
Counterterrorism
Policy
Homeland Security
Procurement
Force Protection
Information Assurance
Weapons
Counterinsurgency
Contingency Planning
Air Force
Counterintelligence
C4Isr
Physical Security
Crisis Management
Navy
Emergency Management
Foreign Policy
Federal Government
Interagency Coordination
Security Operations
Reconnaissance
Strategic Leadership
Exercises
Nato
Sigint

Languages:

English

Mark O'neill

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Mark O'neill

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Mark O'neill

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Mark O'neill

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Mark O'neill

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Mark O'neill

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Location:

United States

Us Patents

Porous Low Dielectric Constant Compositions And Methods For Making And Using Same
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US Patent:

7332445, Feb 19, 2008
Filed:

Sep 19, 2005
Appl. No.:

11/228223
Inventors:

Aaron Scott Lukas - Washington DC, US
Mark Leonard O'Neill - Allentown PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Jean Louise Vincent - Bethlehem PA, US
Assignee:

Air Products and Chemicals, Inc. - Allentown PA
International Classification:

H01L 21/31
US Classification:

438780, 438781, 427568, 427588, 428447
Abstract:

A porous organosilicate glass (OSG) film: SiOCHF, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2. 7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

Mechanical Enhancement Of Dense And Porous Organosilicate Materials By Uv Exposure
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US Patent:

7932188, Apr 26, 2011
Filed:

Oct 31, 2008
Appl. No.:

12/262879
Inventors:

Aaron Scott Lukas - Washington DC, US
Mark Leonard O'Neill - Allentown PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Mark Daniel Bitner - Nazareth PA, US
Assignee:

Air Products and Chemicals, Inc. - Allentown PA
International Classification:

H01L 21/31
US Classification:

438780, 438 99, 438795, 257 40, 257E51012, 501 39, 501 80
Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i. e. , material hardness and elastic modulus) compared to the as-deposited film.