Mark L O'Neill

US Patent:

7332445, Feb 19, 2008

Filed:

Sep 19, 2005

Appl. No.:

11/228223

Inventors:

Aaron Scott Lukas - Washington DC, US
Mark Leonard O'Neill - Allentown PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Jean Louise Vincent - Bethlehem PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31

US Classification:

438780, 438781, 427568, 427588, 428447

Abstract:

A porous organosilicate glass (OSG) film: SiOCHF, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2. 7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

US Patent:

7932188, Apr 26, 2011

Filed:

Oct 31, 2008

Appl. No.:

12/262879

Inventors:

Aaron Scott Lukas - Washington DC, US
Mark Leonard O'Neill - Allentown PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Mark Daniel Bitner - Nazareth PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31

US Classification:

438780, 438 99, 438795, 257 40, 257E51012, 501 39, 501 80

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i. e. , material hardness and elastic modulus) compared to the as-deposited film.