Business Technology Director, Silicon Precursors at Air Products and Chemicals
Location:
Greater San Diego Area
Industry:
Chemicals
Work:
Air Products and Chemicals - Carlsbad, CA since Oct 2012
Business Technology Director, Silicon Precursors
Air Products and Chemicals - Carlsbad, CA Jan 2011 - Dec 2012
Carlsbad Technology Manager
Air Products & Chemicals, Inc. - Carlsbad, CA Oct 2010 - Dec 2012
Director of Intellectual Property, Electronics Division
Air Products & Chemicals - Carlsbad, CA Sep 2009 - Sep 2012
Lead, Silicon Dielectrics Technology
Air Products and Chemicals, Inc. Jul 2009 - Dec 2010
Manager, New Products Research and Commercialization
Education:
University of Pittsburgh 1997 - 1997
postdoc, Chemical Engineering
The University of Texas at Austin 1995 - 1997
postdoc, chemistry, chemical engineering
National Research Councel of Canada 1991 - 1994
Doctor of Philosophy (PhD), Physical Chemistry
Carleton University 1985 - 1994
PhD, Physical Chemistry
Skills:
Intellectual Property Strategy New Product Innovation Semiconductor Manufacturing Materials Chemistry Electronics Manufacturing Polymers R&D Commercialization Chemical Engineering Technology Development Patents Characterization Process Development Semiconductors Materials Science Thin Films Intellectual Property Team Leadership Chemicals Nanotechnology Cross-functional Team Leadership Innovation Management Competitive Intelligence Strategy Development
A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I),R,R,R,R,R(C)OH Formula (I)A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.
Low-Impurity Organosilicon Product As Precursor For Cvd
Steven Gerard Mayorga - Oceanside CA, US Mark Leonard O'Neill - San Marcos CA, US Kelly Ann Chandler - San Marcos CA, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
C07F 7/04
US Classification:
556470, 556442, 556466, 556467, 556471
Abstract:
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
Stabilizers For The Stabilization Of Unsaturated Hydrocarbon-Based Precursor
Steven Gerard Mayorga - Oceanside CA, US Kelly Ann Chandler - San Marcos CA, US Mary Kathryn Haas - Emmaus PA, US Mark Leonard O'Neill - Allentown PA, US Dino Sinatore - Whitehall PA, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
C09K 3/00 C09K 15/20
US Classification:
25218229, 252403
Abstract:
A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer. A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.
Methods For Depositing Silicon Dioxide Or Silicon Oxide Films Using Aminovinylsilanes
Manchao Xiao - San Diego CA, US Liu Yang - Yorba Linda CA, US Kirk Scott Cuthill - Vista CA, US Heather Regina Bowen - Vista CA, US Bing Han - Lansdale PA, US Mark Leonard O'Neill - San Marcos CA, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
C23C 16/40
US Classification:
42725531, 42725537, 117 84, 117 88
Abstract:
Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:.
Process For Producing Silicon And Oxide Films From Organoaminosilane Precursors
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:.
Low-Impurity Organosilicon Product As Precursor For Cvd
Steven Mayorga - Oceanside CA, US Mark O'Neill - Allentown PA, US Kelly Chandler - San Marcos CA, US
Assignee:
AIR PRODUCTS AND CHEMICALS, INC. - Allentown PA
International Classification:
C07F 7/08
US Classification:
556467000
Abstract:
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
Organoaminosilane Precursors And Methods For Depositing Films Comprising Same
Manchao Xiao - San Diego CA, US Mark Leonard O'Neill - San Marcos CA, US Heather Regina Bowen - Vista CA, US Hansong Cheng - Singapore, SG Xinjian Lei - Vista CA, US
Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:wherein Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino, a Cto Caryl, a linear or branched Cto Cfluorinated alkyl, and a Cto Ccyclic alkyl group.
Halogenated Organoaminosilane Precursors And Methods For Depositing Films Comprising Same
Manchao Xiao - San Diego CA, US Xinjian Lei - Vista CA, US Mark Leonard O'Neill - San Marcos CA, US Bing Han - Beijing, CN Ronald Martin Pearlstein - San Marcos CA, US Haripin Chandra - Vista CA, US Heather Regina Bowen - Vista CA, US Agnes Derecskei-Kovacs - Macungie PA, US
Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:wherein X is selected from Cl, Br, I; Ris selected from linear or branched C-Calkyl group, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl, and a C-Caryl group; Ris selected from a linear or branched C-Calkyl, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl group, and a C-Caryl group; Ris selected from a branched C-Calkyl group, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl group, and a C-Caryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein Rand Rare linked or not linked to form a ring.