Mark J O'Neill

US Patent:

7098149, Aug 29, 2006

Filed:

Mar 4, 2003

Appl. No.:

10/379466

Inventors:

Aaron Scott Lukas - Lansdale PA, US
Mark Leonard O'Neill - Allentown PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Mark Daniel Bitner - Nazareth PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/31

US Classification:

438778, 438780

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i. e. , material hardness and elastic modulus) compared to the as-deposited film.

US Patent:

7404990, Jul 29, 2008

Filed:

Nov 14, 2002

Appl. No.:

10/295568

Inventors:

Aaron Scott Lukas - Lansdale PA, US
Mark Leonard O'Neill - Allentown PA, US
Mark Daniel Bitner - Nazareth PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Allentown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B05D 3/06
C08F 2/34
C08F 2/52
C08J 7/18
C08J 7/16
C23C 16/00
C23C 16/50
C23C 16/56

US Classification:

427553, 427554, 427555, 427487, 427489, 427532, 427535, 427543, 427551, 42725537, 427255393, 438790, 438789

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

US Patent:

7468290, Dec 23, 2008

Filed:

Jul 21, 2003

Appl. No.:

10/624357

Inventors:

Aaron Scott Lukas - Lansdale PA, US
Mark Leonard O'Neill - Allentown PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Orefield PA, US
Mark Daniel Bitner - Nazareth PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 51/40

US Classification:

438 99, 438780, 438795, 42725528, 427569, 501 39, 501 80

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i. e. , material hardness and elastic modulus) compared to the as-deposited film.

US Patent:

7470454, Dec 30, 2008

Filed:

Jul 21, 2003

Appl. No.:

10/624356

Inventors:

Aaron Scott Lukas - Lansdale PA, US
Mark Leonard O'Neill - Allentown PA, US
Mark Daniel Bitner - Nazareth PA, US
Jean Louise Vincent - Bethlehem PA, US
Raymond Nicholas Vrtis - Allentown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

B05D 5/00
B05D 3/06
B05D 3/02
C23C 16/18
C23C 16/40
C23C 16/42
C23C 16/48
C23C 16/517
C23C 16/56
C08J 7/16
H01L 21/3105
H01L 21/4757

US Classification:

427509, 427515, 427542, 427544, 427553, 427557, 427558, 427 59, 42725537, 42725528, 438788, 438789, 438790, 438784

Abstract:

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.