Mark T Simpson

US Patent:

6346451, Feb 12, 2002

Filed:

Jun 30, 1999

Appl. No.:

09/343912

Inventors:

Mark Simpson - Ossining NY
Theodore Letavic - Putnam Valley NY

Assignee:

Philips Electronics North America Corporation - New York NY

International Classification:

H01L 21331

US Classification:

438311, 438186, 257134, 257138, 257139, 257285, 257287, 257488

Abstract:

A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by an insulation region. In order to provide improved breakdown voltage characteristics, a dielectric layer is provided over at least a part of the insulation region and the gate electrode, and a field plate electrode is provided over at least a part of the dielectric layer which is in direct contact with the insulation region, with the field plate electrode being connected to an electrode of the lateral transistor device.

US Patent:

6362504, Mar 26, 2002

Filed:

Nov 22, 1995

Appl. No.:

08/561960

Inventors:

Mark R. Simpson - White Plains NY

Assignee:

Philips Electronics North America Corporation - New York NY

International Classification:

H01L 29788

US Classification:

257317, 257316, 257321

Abstract:

A nonvolatile memory cell of the type having a single lateral transistor includes source and drain regions separated by a channel region. A floating gate is provided over at least the channel region and is separated therefrom by a gate oxide, with a control gate over the floating gate and insulated therefrom. By having the floating gate extend over substantially its entire length at a substantially constant distance from the surface of the device, and providing the floating gate and the surface with similarly-contoured corners adjacent ends of the source and drain regions alongside the channel region, the nonvolatile memory cell can be programmed and erased using lower voltages than those required by priorart devices.

US Patent:

20050028194, Feb 3, 2005

Filed:

Sep 2, 2004

Appl. No.:

10/932460

Inventors:

Jan Elenbaas - New York NY, US
Nevenka Dimitrova - Yorktown Heights NY, US
Thomas McGee - Garrison NY, US
Mark Simpson - White Plains NY, US
Jacquelyn Martino - Irvington NY, US
Mohamed Abdel-Mottaleb - Ossining NY, US
Marjorie Garrett - Ossining NY, US
Carolyn Ramsey - Ossining NY, US
Ranjit Desai - Cambridge MA, US

International Classification:

H04N007/173
H04N007/10
H04N007/025
G06F017/30
G06F007/00
H04N005/445

US Classification:

725032000, 725132000, 715723000, 715704000, 348563000

Abstract:

A video retrieval system is presented that allows a user to quickly and easily select and receive stories of interest from a video stream. The video retrieval system classifies stories and delivers samples of selected stories that match each user's current preference. The user's preferences may include particular broadcast networks, persons, story topics, keywords, and the like. Key frames of each selected story are sequentially displayed; when the user views a frame of interest, the user selects the story that is associated with the key frame for more detailed viewing. This invention is particularly well suited for targeted news retrieval. In a preferred embodiment, news stories are stored, and the selection of a news story for detailed viewing based on the associated key frames effects a playback of the selected news story. The principles of this invention also allows a user to effect a directed search of other types of broadcasts as well. For example, the user may initiate an automated scan that presents samples of broadcasts that conform to the user's current preferences, akin to directed channel-surfing.

US Patent:

20100332250, Dec 30, 2010

Filed:

Dec 10, 2008

Appl. No.:

12/747645

Inventors:

Mark R. Simpson - White Plains NY, US
Lalitha Agnihotri - Hartsdale NY, US
William Tao Shi - Briarcliff Manor NY, US
James David Schaffer - Wappingers Falls NY, US

Assignee:

KONINKLIJKE PHILIPS ELECTRONICS N.V. - EINDHOVEN

International Classification:

G06Q 50/00
G06Q 30/00
G06Q 90/00
G06F 17/00
G06F 15/16
G06F 17/30
A61B 5/00

US Classification:

705 2, 705500, 709203, 707769, 600300, 707E17014

Abstract:

A pre-examination patient information gathering system comprises an electronic user interface () including a display () and at least one user input device (), and an electronic processor () configured to present an initial set of questions () to a patient via the electronic user interface, receive responses to the initial set of questions from the patient via the electronic user interface, construct or select follow-up questions () based on the received responses, present the constructed or selected follow up questions to the patient via the electronic user interface, and receive responses to the constructed or selected follow up questions from the patient via the electronic user interface. A physiological sensor () may be configured to autonomously sense a patient physiological parameter as the patient interacts with the electronic user interface.

US Patent:

20130208962, Aug 15, 2013

Filed:

Oct 11, 2011

Appl. No.:

13/880200

Inventors:

Ye Xu - Hartsdale NY, US
Lilla Boroczky - Mount Kisco NY, US
Mark Simpson - White Plains NY, US

Assignee:

KONINKLIJKE PHILIPS ELECTRONICS N.V. - Eindhoven

International Classification:

G06F 17/30
G06T 7/00

US Classification:

382128, 707748, 707609

Abstract:

A system and method for context-dependent data filtering for clinical decision support are disclosed. The system and method comprise determining values for characteristics of a present case, determining whether the present case is a special case based on the determined values, receiving input from a user verifying that the present case is the special case and saving the present case to a database containing a compilation of cases if the user verifies that the present case is the special case.

US Patent:

20130268547, Oct 10, 2013

Filed:

Dec 7, 2011

Appl. No.:

13/993419

Inventors:

Lilla Boroczky - Mount Kisco NY, US
Mark R Simpson - White Plains NY, US
Ye Xu - Hartsdale NY, US
Michael Chun-chieh Lee - Bronx NY, US

Assignee:

KONINKLIJKE PHILIPS N.V. - EINDHOVEN

International Classification:

G06F 17/30

US Classification:

707758

Abstract:

A non-transitory computer-readable storage medium storing a set of instructions executable by a processor. The set of instructions is operable to receive a current patient set of data relating to a current patient; compare the current patient set of data to a plurality of previous patient sets of data, each of the previous patient sets of data corresponding to a previous patient; select one of the previous patient sets of data based on a level of similarity between the selected previous patient set of data and the current patient set of data; and provide the selected previous patient set of data to a user.

US Patent:

56065213, Feb 25, 1997

Filed:

Jun 28, 1995

Appl. No.:

8/496104

Inventors:

Satyendranath Mukherjee - Yorktown NY
Mark Simpson - Ossining NY

Assignee:

Philips Electronics North America Corp. - New York NY

International Classification:

G11C 1100
G11C 1134
H01L 29788

US Classification:

365149

Abstract:

An electrically erasable and programmable read only memory (EEPROM) is provided with an insulated control gate and an insulating floating gate in a trench in a semiconductor body. A dielectric layer is disposed along the sidewalls of the trench to separate the floating gate and the semiconductor body. The thickness of the dielectric layer along at least one sidewall of the trench is greater than the thickness of the dielectric layer along the other sidewalls of the trench in order to increase the programming speed due to a higher electric field in the gate oxide along the remaining sidewalls.

US Patent:

62326368, May 15, 2001

Filed:

Nov 25, 1998

Appl. No.:

9/200110

Inventors:

Mark Simpson - Ossining NY
Theodore Letavic - Putnam Valley NY

Assignee:

Philips Electronics North America Corporation - New York NY

International Classification:

H01L 2701

US Classification:

257347

Abstract:

A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region. In order to provide an optimum combination of low "on" resistance and high breakdown voltage, the lateral drift region is provided with a graded lateral doping profile, with two substantially linearly graded drift region portions having different doping profile slopes. Specifically, the slope of the doping profile is higher in the portion of the lateral drift region adjacent the drain region than in the portion of the lateral drift region adjacent the body region.