Mark Sidney Swenson

US Patent:

6476426, Nov 5, 2002

Filed:

Jul 6, 1999

Appl. No.:

09/347552

Inventors:

Jennifer J. Patterson - Mesa AZ
Mark S. Swenson - Higley AZ
Clifford I. Drowley - Scottsdale AZ

Assignee:

Motorola, Inc. - Schuamburg IL

International Classification:

H01L 27148

US Classification:

257225, 257229, 257233, 257240, 438 75

Abstract:

An electronic component having an image sensing device ( ) and a method for improving pixel charge transfer in the image sensing device ( ). The image sensing device ( ) has a transfer gate ( ) between a source region ( ) and an image sensing region. The image sensing region is formed to have a wider device width proximate to the transfer gate ( ) than at a point distal from the transfer gate ( ).

US Patent:

61005568, Aug 8, 2000

Filed:

Nov 14, 1997

Appl. No.:

8/970703

Inventors:

Clifford I. Drowley - Phoenix AZ
Robert M. Guidash - Rush NY
Mark S. Swenson - Higley AZ

Assignee:

Motorola Inc. - Schaumburg IL
Eastman Kodak Co. - Rochester NY

International Classification:

H01L 2972

US Classification:

257292

Abstract:

An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

US Patent:

62216864, Apr 24, 2001

Filed:

Jan 28, 2000

Appl. No.:

9/493366

Inventors:

Clifford I. Drowley - Phoenix AZ
Mark S. Swenson - Higley AZ
Jennifer J. Patterson - Mesa AZ
Shrinath Ramaswami - Gilbert AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2100

US Classification:

438 57

Abstract:

An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of a MOS transistor (32).

US Patent:

60230819, Feb 8, 2000

Filed:

Nov 14, 1997

Appl. No.:

8/970720

Inventors:

Clifford I. Drowley - Phoenix AZ
Mark S. Swenson - Higley AZ
Jennifer J. Patterson - Mesa AZ
Shrinath Ramaswami - Gilbert AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 31062
H01L 31113

US Classification:

257292

Abstract:

An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).