Marshall James Maple from Campbell, CA, age 67

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Semiconductor Structure Comprising Moisture Barrier And Conductive Redistribution Layer
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US Patent:

8536707, Sep 17, 2013
Filed:

Nov 29, 2011
Appl. No.:

13/306708
Inventors:

James Wholey - Saratoga CA, US
Ray Myron Parkhurst - Santa Clara CA, US
Marshall Maple - Cupertino CA, US
Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H01L 23/52
US Classification:

257758, 257760, 257774, 438627, 438643, 438653
Abstract:

A semiconductor structure includes semiconductor devices on a substrate, a moisture barrier on the substrate surrounding the semiconductor devices, and a metal conductive redistribution layer formed over the moisture barrier. The metal conductive redistribution layer and the moisture barrier define a closed compartment containing the semiconductor devices.

Increased Interconnect Density Electronic Package And Method Of Fabrication
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US Patent:

20070257375, Nov 8, 2007
Filed:

May 2, 2006
Appl. No.:

11/415705
Inventors:

James Roland - Fort Collins CO, US
Ray Parkhurst - Hillsboro OR, US
Ashish Alawani - San Jose CA, US
Marshall Maple - Cupertino CA, US
Thu Nguyen - San Jose CA, US
International Classification:

H01L 21/00
US Classification:

257778000, 438108000
Abstract:

An electronic package. The electronic package includes an electronic component having a heat producing device, an attachment piece, and at least two attachment units. Each unit includes an attachment pillar having a mating surface, a solder layer formed on the mating surface, and an attachment pad located on the attachment piece. The pillar of each unit is attached to its unit attachment pad via its unit solder layer and is otherwise attached to the electronic component. One pillar at least partially covers the heat producing device. Prior to attachment of pillars to their associated unit pads, the unit solder layer of the pillar at least partially covering the heat producing device is patterned to cover less than its mating surface, and the pillar at least partially covering the heat producing device is thermally connected to the heat producing device and to its unit attachment pad via its unit solder layer.

Broadband Printed Spiral
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US Patent:

54459222, Aug 29, 1995
Filed:

Nov 19, 1992
Appl. No.:

7/978813
Inventors:

Marshall Maple - San Jose CA
Assignee:

Hewlett-Packard Company - Palo Alto CA
International Classification:

G03F 726
H05K 116
US Classification:

430314
Abstract:

a thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.

Broadband Printed Spiral
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US Patent:

52158667, Jun 1, 1993
Filed:

May 14, 1990
Appl. No.:

7/523066
Inventors:

Marshall Maple - San Jose CA
Assignee:

Avantek, Inc. - Santa Clara CA
International Classification:

G03F 726
H05K 116
US Classification:

430314
Abstract:

A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.

Broadband Printed Spiral
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US Patent:

49262920, May 15, 1990
Filed:

Aug 9, 1989
Appl. No.:

7/391459
Inventors:

Marshall Maple - San Jose CA
Assignee:

Avantek, Inc. - Milpitas CA
International Classification:

H05K 116
H01F 500
US Classification:

361402
Abstract:

A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.

Circuit Package With Internal And External Shielding
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US Patent:

20170127581, May 4, 2017
Filed:

Oct 30, 2015
Appl. No.:

14/927511
Inventors:

- Singapore, SG
Husnu Masaracioglu - San Jose CA, US
Marshall Maple - Cupertino CA, US
Deog-Soon Choi - Seoul, KR
Ashish Alawani - San Jose CA, US
International Classification:

H05K 9/00
H05K 1/11
H05K 1/02
H05K 1/18
Abstract:

A module includes a circuit package, which includes first and second electronic components on a substrate, internal and external shields, and a molded compound. The first electronic component includes a first die substrate with first electronic circuitry that generates electromagnetic radiation. The second electronic component includes a second die substrate with second electronic circuitry. The internal shield is electrically connected to ground and substantially covers a surface of the second die substrate facing away from the substrate, the internal shield being configured to shield the second electronic circuitry from the electromagnetic radiation generated by the first electronic circuitry. The molded compound is disposed over the substrate and the first and second electronic components, and the external shield is disposed on at least one outer surface of the circuit package and electrically connected to ground. The external shield is configured to protect the circuit package from external electromagnetic radiation and environmental stress.

Hybrid Power Amplifier Having Electrical And Thermal Conduction Path
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US Patent:

20150349723, Dec 3, 2015
Filed:

May 28, 2014
Appl. No.:

14/289591
Inventors:

- Singapore, SG
David Bockelman - Dripping Springs TX, US
Marshall Maple - Cupertino CA, US
Joo Min Jung - Seoul, KR
Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd . - Singapore
International Classification:

H03F 1/30
H01L 23/48
H03F 3/21
H03F 1/02
H03F 3/19
Abstract:

A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.

Hybrid Power Amplifier Comprising Heterojunction Bipolar Transistors (Hbts) And Complementary Metal Oxide Semiconductor (Cmos) Devices
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US Patent:

20150349731, Dec 3, 2015
Filed:

May 28, 2014
Appl. No.:

14/289597
Inventors:

- Singapore, SG
David Bockelman - Dripping Springs TX, US
Marshall Maple - Cupertino CA, US
Joo Min Jung - Seoul, KR
Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H03F 3/21
H03F 1/52
H03F 3/45
H03F 3/19
Abstract:

A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.