Stephen A. Keller - Sugar Land TX Piper A. Spry - Sugar Land TX Martha S. Adams - Rosenberg TX Ralph G. Harper - Guy TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21441 H01L 21461
US Classification:
437192
Abstract:
A method for forming CVD tungsten contacts in a planarized semiconductor body. The method utilizes aluminum as an etch mask and etch stop to prevent etching of underlying layers during contact formation.
Stephen A. Keller - Sugar Land TX Piper A. Spry - Sugar Land TX Martha S. Adams - Rosenberg TX Ralph G. Harper - Guy TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21285
US Classification:
437192
Abstract:
Metal interconnects and method for forming same such that an intermediately formed aluminum layer provides an etch stop and etch mask during the tungsten etch back. The method may be used to form tungsten contacts without requiring pre-metal planarization of the semiconductor body.