Martin A Kent

US Patent:

6779481, Aug 24, 2004

Filed:

Feb 22, 2001

Appl. No.:

09/789575

Inventors:

Martin A. Kent - Andover MA
Abron Toure - Portland OR
Stephen N. Golovato - Austin TX

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23C 16509

US Classification:

118723R, 118723 E, 15634543, 15634551

Abstract:

An electrical coupling is provided between chamber parts of electronic device processing equipment (e. g. , equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber. Although in the illustrated embodiments the cover of the electrode assembly is coupled to the chamber liner, the coupling could be utilized to suppress potential differences between other chamber parts.

US Patent:

7651583, Jan 26, 2010

Filed:

Jun 4, 2004

Appl. No.:

10/860149

Inventors:

Martin Kent - Andover MA, US
Jay Wallace - Danvers MA, US
Thomas Hamelin - Georgetown MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23F 1/00
H01L 21/306
C23C 16/00

US Classification:

15634531, 15634551, 15634552, 15634554, 118719, 118724, 118725, 118728, 118729, 118733

Abstract:

A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

US Patent:

7718032, May 18, 2010

Filed:

Jun 22, 2006

Appl. No.:

11/425883

Inventors:

Martin Kent - Andover MA, US
Eric J. Strang - Chandler AZ, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23F 1/00

US Classification:

15634537, 15634533, 15634552, 118724

Abstract:

A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

US Patent:

20050269291, Dec 8, 2005

Filed:

Jun 4, 2004

Appl. No.:

10/859975

Inventors:

Martin Kent - Andover MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23F001/00

US Classification:

216058000, 216067000, 156345310, 156345240

Abstract:

A method and system are described for operating a processing system in order to optimize throughput. The processing system is configured for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion.

US Patent:

20100237046, Sep 23, 2010

Filed:

May 2, 2010

Appl. No.:

12/772232

Inventors:

Martin Kent - Andover MA, US
Eric J. Strang - Gilbert AZ, US

Assignee:

TOKYO ELECTRON LIMITED - Tokyo

International Classification:

H01L 21/306
C23F 1/02

US Classification:

216 58, 15634537, 15634527

Abstract:

A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

US Patent:

52483711, Sep 28, 1993

Filed:

Aug 13, 1992

Appl. No.:

7/929099

Inventors:

Joseph A. Maher - South Hamilton MA
Martin A. Kent - Andover MA

Assignee:

General Signal Corporation - Stamford CT

International Classification:

H01L 2100

US Classification:

156345

Abstract:

Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects. In one improved efficiency selected ion energy embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density source that synergistically cooperates with an apertured grid to provide selected-energy ions at higher densities than heretofore possible. In any embodiment, both build-up on and removal from the substrate are possible.