Robert Alan Ashton - Orlando FL Steven Alan Lytle - Orlando FL Mary Drummond Roby - Orlando FL Daniel Joseph Vitkavage - Orlando FL
Assignee:
Agere Systems Guardian Corp. - Orlando FL
International Classification:
G01R 3126
US Classification:
324755, 3241581
Abstract:
A method and apparatus for measuring Kelvin contact resistance within an integrated circuit interconnect is provided, having upper and lower Kelvin contact resistance contacts covering a via and interconnect being measured, along with a third conductor placed substantially between the upper and lower Kelvin contacts, and in contact with the via.
Use Of Small Openings In Large Topography Features To Improve Dielectric Thickness Control And A Method Of Manufacture Thereof
Robert A. Ashton - Orlando FL Steven A. Lytle - Orlando FL Mary D. Roby - Orlando FL Morgan J. Thoma - Orlando FL Daniel J. Vitkavage - Winter Garden FL
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 2348
US Classification:
257752, 257758, 257773
Abstract:
The present invention provides a semiconductor device and method of manufacture thereof that provides improved dielectric thickness control. The semiconductor device includes a metal feature located on a semiconductor substrate, wherein the metal feature has openings formed therein, or depending on the device, therethrough. The semiconductor device further includes a fluorinated dielectric layer located over the metal feature and within the openings. Thus, the inclusion of openings within the metal feature allows for a substantially planar surface of the fluorinated dielectric layer.
Process For The Selective Control Of Feature Size In Lithographic Processing
John M. Sharpe - Allentown PA, US Jerome Chu - Allentown PA, US Matthew Moucheron - Allentown PA, US Mary Roby - Plano TX, US
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
G06F017/50
US Classification:
716 21, 716 19
Abstract:
The present invention provides a non-global process for designing an integrated circuit layout. The process comprises locating an isolated layout feature of an integrated circuit layout and non-globally changing at least one lateral dimension of the isolated layout feature to obtain an optimized increment. The change in lateral dimension by the optimized increment does not violate a minimum separation distance between the isolated layout feature and the other adjacent layout features. The process may be incorporated into a system for non-globally modifying an integrated circuit layout, described in a data file or an integrated circuit design system.
Stuart M. Jacobsen - Frisco TX, US Mary Roby - Plano TX, US Erika Shoemaker - Richardson TX, US Maria Wang - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
B41J 29/38
US Classification:
347 14, 347 56, 347 58
Abstract:
A thermal inkjet printhead of the present invention includes a heating element , an ink chamber, control circuitry , an ink reservoir, and a memory array. The control circuitry causes the heating element to generate thermal energy thereby causing ink within the ink chamber to generate bubbles of ink, which are then expelled through a nozzle. The ink reservoir replenishes used ink in the ink chamber. The memory array stores and provides the identification parameters for the thermal inkjet printhead. The identification parameters are typically provided during initialization of the printer and include color(s) of ink (e. g. , black, green, red, blue), a number of nozzles on the thermal inkjet printhead, an addressing frequency, nozzle spacing, heating architecture, and the like. The identification parameters can include other information such as a unique serial identification number for the thermal inkjet printhead, manufacturer serial number, lot number, date of manufacture, compatible printers, ink capacity, ink remaining, re-ordering information for replacement ink cartridges, and the like.
Semiconductor Device Including An Amorphous Nitrided Silicon Adhesion Layer And Method Of Manufacture Therefor
Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer over a substrate, and forming a second semiconductor layer over the first semiconductor layer, wherein an amorphous nitrided silicon adhesion layer is located between and adheres the first and second semiconductor layers.
Process For Reactive Ion Etching A Layer Of Diamond Like Carbon
Erika Leigh Shoemaker - Richardson TX, US Maria Wang - Plano TX, US Mary Roby - Plano TX, US Stuart Jacobsen - Frisco TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
C03C 15/00
US Classification:
216 66, 216 74, 216 81
Abstract:
Provided is a process for manufacturing a diamond like carbon layer. The process for manufacturing the diamond like carbon layer includes, without limitation, forming a layer of diamond like carbon over a substrate, and reactive ion etching the layer of diamond like carbon.
Bond Pad Support Structure For A Semiconductor Device
Daniel Chesire - Orlando FL, US Gerard Zaneski - Orlando FL, US Mary Roby - Orlando FL, US Daniel Vitkavage - Winter Garden FL, US Scott Jessen - Orlando FL, US
A bond pad support structure for a semiconductor device comprises at least two metal layers subjacent an uppermost passivation layer on the device. An opening through the passivation layer exposes a top surface of a top metal layer. A metal feature is formed in an insulating layer, disposed between the two metal layers, and divides the insulating layer into a plurality of discrete sections. The metal feature includes a plurality of intersecting metal-filled recesses that interconnect the two metal layers. At least a portion of the metal feature is disposed within a cross-sectional area defined as a perimeter of a periphery of the opening.
Stuart Jacobsen - Frisco TX, US Mary Roby - Plano TX, US Erika Shoemaker - Richardson TX, US Maria Wang - Plano TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
B41J 2/05
US Classification:
347061000
Abstract:
A thermal inkjet printhead of the present invention includes a heating element , an ink chamber, control circuitry , an ink reservoir, and a memory array . The control circuitry causes the heating element to generate thermal energy thereby causing ink within the ink chamber to generate bubbles of ink, which are then expelled through a nozzle. The ink reservoir replenishes used ink in the ink chamber. The memory array stores and provides the identification parameters for the thermal inkjet printhead . The identification parameters are typically provided during initialization of the printer and include color(s) of ink (e.g., black, green, red, blue), a number of nozzles on the thermal inkjet printhead, an addressing frequency, nozzle spacing, heating architecture, and the like. The identification parameters can include other information such as a unique serial identification number for the thermal inkjet printhead, manufacturer serial number, lot number, date of manufacture, compatible printers, ink capacity, ink remaining, re-ordering information for replacement ink cartridges, and the like.
Name / Title
Company / Classification
Phones & Addresses
Mary Roby Director
Collin County Community College District Foundation, Inc
Mary Roby Vice-President
Preston Meadow Phase 1/Phase 2 Homeowners Association
Mary Roby
HILLANDALE CENTER V CONDOMINIUM ASSOCIATION
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A. C. Moore Elementary School Columbia SC 1959-1965, Whitcomb Elementary School Milwaukie OR 1961-1967, Dale Ickes Junior High School Milwaukie OR 1967-1969
Community:
Anne Bouknight, Elisabeth Hane, Jane Harris, Carol Harrison, Kathy Hyman, Marion Marks, Margaret Compton, Evelyn Hoogenboom, Anne Pearce