Matthew D Gallagher

US Patent:

6674102, Jan 6, 2004

Filed:

Jan 25, 2001

Appl. No.:

09/769640

Inventors:

Douglas Duane Coolbaugh - Essex Junction VT
Mark D. Dupuis - South Burilington VT
Matthew D. Gallagher - Burlington VT
Peter J. Geiss - Underhill VT
Brett A. Philips - Fairfax VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29737

US Classification:

257197, 257586, 257592, 257616

Abstract:

A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

US Patent:

6936509, Aug 30, 2005

Filed:

Sep 19, 2003

Appl. No.:

10/665713

Inventors:

Douglas Duane Coolbaugh - Essex Junction VT, US
Mark D. Dupuis - South Burilington VT, US
Matthew D. Gallagher - Burlington VT, US
Peter J. Geiss - Underhill VT, US
Brett A. Philips - Fairfax VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/8249

US Classification:

438235, 438312, 438318

Abstract:

A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

US Patent:

20050095787, May 5, 2005

Filed:

Nov 19, 2004

Appl. No.:

10/991460

Inventors:

Arne Ballantine - Cold Spring NY, US
Donna Johnson - Underhill VT, US
Matthew Gallagher - Burlington VT, US
Peter Geiss - Underhill VT, US
Jeffrey Gilbert - Burlington VT, US
Shwu-Jen Jeng - Wappingers Falls NY, US
Robb Johnson - South Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/336

US Classification:

438261000

Abstract:

A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

US Patent:

6660664, Dec 9, 2003

Filed:

Mar 31, 2000

Appl. No.:

09/541091

Inventors:

James W. Adkisson - Jericho VT
Arne W. Ballantine - Cold Spring NY
Matthew D. Gallagher - Burlington VT
Peter J. Geiss - Underhill VT
Jeffrey D. Gilbert - Burlington VT
Shwu-Jen Jeng - Wappingers Falls NY
Donna K. Johnson - Underhill VT
Robb A. Johnson - South Burlington VT
Glen L. Miles - Essex Junction VT
Kirk D. Peterson - Essex Junction VT
James J. Toomey - Poughkeepsie NY
Tina Wagner - Newburgh NY

Assignee:

International Business Machines Corp. - Armonk NY

International Classification:

H01L 2131

US Classification:

438791, 438792, 438257, 438260

Abstract:

A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.