Matthew Lassiter

US Patent:

7049034, May 23, 2006

Filed:

Sep 9, 2003

Appl. No.:

10/658039

Inventors:

Patrick M. Martin - Dallas TX, US
Matthew Lassiter - Allen TX, US
Darren Taylor - Allen TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Allen TX, US

Assignee:

Photronics, Inc. - Brookfield CT

International Classification:

G01F 9/00

US Classification:

430 5

Abstract:

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

US Patent:

20040043303, Mar 4, 2004

Filed:

Aug 27, 2002

Appl. No.:

10/229830

Inventors:

Matthew Lassiter - McKinney TX, US
Michael Cangemi - McKinney TX, US

International Classification:

G03F001/08
G03F007/11
G03F007/20
G03F007/40

US Classification:

430/005000, 430/271100, 430/275100, 430/313000

Abstract:

The present invention relates generally to improved photomask blanks used in photolithography for the manufacture of integrated circuits and other semiconductor devices, and more specifically, to the detection of defects in such photomasks after processing. In particular, the present invention is directed to a photomask blank having one or more intermediate layers made from materials having a higher extinction coefficient at the inspection tool wavelength than exposure tool wavelengths. The intermediate layer(s) are made from materials that absorb a sufficient amount of light to meet the optical requirements of inspection tools while at the same time transmit a sufficient amount of light to meet the optical requirements of exposure tools. As a result, the photomask improves inspection results of a photomask without sacrificing transmission properties during the semiconductor writing process.

US Patent:

20050026053, Feb 3, 2005

Filed:

Sep 8, 2004

Appl. No.:

10/936026

Inventors:

Patrick Martin - Dallas TX, US
Matthew Lassiter - McKinney TX, US
Darren Taylor - The Colony TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Austin TX, US

International Classification:

B32B009/00
B32B015/00
B32B017/06
G03F009/00

US Classification:

430005000, 428428000, 428432000

Abstract:

The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.