Matthew B Ross

US Patent:

6358670, Mar 19, 2002

Filed:

Dec 28, 1999

Appl. No.:

09/473373

Inventors:

Selmer Wong - San Diego CA
Matthew Ross - La Jolla CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

G03C 500

US Classification:

430296, 430313, 430328, 430942

Abstract:

A process for increasing the etch resistance of the upper surface of photoresists by a surface-intensive dose of electron beam radiation. Such imparts increased surface etch resistance to the photoresist without causing as much shrinkage in the bulk of the film. A photographic image is produced by imagewise exposing a photographic composition layer on a substrate to activating energy to produce a latent pattern on the layer. This is followed by developing the photographic layer to thereby remove the nonimage areas thereof and leaving the image areas thereof in the form of a pattern on the substrate. The imaged layer is then overall irradiated to electron beam radiation for the full depth of the layer and then overall irradiated to electron beam radiation one or more additional times at a depth which is less than the full depth of the layer.

US Patent:

6426127, Jul 30, 2002

Filed:

Dec 28, 1999

Appl. No.:

09/473374

Inventors:

Matthew Ross - La Jolla CA
Heike Thompson - San Diego CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

C08J 704

US Classification:

427503, 427496, 427497, 528 31, 528 38, 528 12, 528 21, 528 24, 522 5, 522172, 428447

Abstract:

The invention pertains to dielectric films for the production of microelectronic devices. A spin-on glass film is produced by depositing a silazane polymer containing composition film onto a substrate and then exposing the film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

US Patent:

6489225, Dec 3, 2002

Filed:

Jun 8, 2000

Appl. No.:

09/590066

Inventors:

Matthew F. Ross - La Jolla CA
Charles Hannes - Escondido CA
William R. Livesay - San Diego CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

H01L 2126

US Classification:

438535, 438795, 438798

Abstract:

An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

US Patent:

6548899, Apr 15, 2003

Filed:

Dec 4, 2000

Appl. No.:

09/729004

Inventors:

Matthew Ross - San Diego CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

H01L 2348

US Classification:

257750, 257759, 257760, 438762, 438778, 438795

Abstract:

A treated substrate produced by a process for treating a dielectric layer on a substrate, which comprises applying a sufficient amount of a liquid dielectric composition onto an upper surface of a semiconductor substrate to thereby form a dielectric layer on the upper surface of the substrate, the dielectric layer having a thickness of from about 2,000 to about 50,000 angstroms; heating a surface of the dielectric layer and exposing the dielectric layer to an electron beam radiation, in which the electron beam radiation is concentrated at a distance within about 1,000 angstroms from the surface of the dielectric layer, under vacuum conditions to remove substantially all moisture and/or contaminants from the surface of the dielectric layer at a depth of up to about 1,000 angstroms from the surface of the dielectric layer; and chemical vapor depositing a chemical vapor deposit material onto the surface of the treated dielectric layer while maintaining the vacuum conditions.

US Patent:

6551926, Apr 22, 2003

Filed:

Jun 8, 2000

Appl. No.:

09/590067

Inventors:

Matthew F. Ross - La Jolla CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

H01L 2144

US Classification:

438660, 438687

Abstract:

A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.

US Patent:

6582777, Jun 24, 2003

Filed:

Feb 17, 2000

Appl. No.:

09/506515

Inventors:

Matthew Ross - La Jolla CA
Heike Thompson - San Diego CA
Jingjun Yang - Cary NC

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

B05D 306

US Classification:

427551, 427552, 4272491, 42725529

Abstract:

A process for forming low dielectric constant dielectric films for the production of microelectronic devices. A dielectric layer is formed on a substrate by chemical vapor depositing a monomeric or oligomeric dielectric precursor in a chemical vapor deposit apparatus, or a reaction product formed from the precursor in the apparatus, onto a substrate, to form a layer on a surface of a substrate. After optionally heating the layer at a sufficient time and temperature to dry the layer, the layer is then exposed to electron beam radiation, for a sufficient time, temperature, electron beam energy and electron beam dose to modify the layer. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

US Patent:

6607991, Aug 19, 2003

Filed:

Dec 29, 1999

Appl. No.:

09/474399

Inventors:

William R. Livesay - San Diego CA
Matthew F. Ross - La Jolla CA
Anthony L. Rubiales - Poway CA
Heike Thompson - San Diego CA
Selmer Wong - San Diego CA
Trey Marlowe - La Jolla CA
Mark Narcy - Escondido CA

Assignee:

Electron Vision Corporation - San Diego CA

International Classification:

H01L 21469

US Classification:

438787, 438473, 438638

Abstract:

An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

US Patent:

6753129, Jun 22, 2004

Filed:

Mar 4, 2002

Appl. No.:

10/090465

Inventors:

William R. Livesay - San Diego CA
Matthew F. Ross - San Diego CA
Richard L. Ross - Del Mar CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

G03G 500

US Classification:

430296, 430311, 430328, 430329, 430942

Abstract:

A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy. After imagewise exposing and developing, the image areas of the photosensitive composition are irradiated to electron beam radiation to thereby increase the resistance of the photosensitive composition in the image areas to an etchant while simultaneously cooling the photosensitive composition during electron beam radiation to maintain the photosensitive composition at a temperature of less than about 20Â C.