Matthew Edward Souter from 10905 Osterman Ave, Tustin, CA 92782, age 57, Phone: 7143894442

Resumes

Matthew Souter

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Location:

Greater Los Angeles Area

Industry:

Machinery

Us Patents

Laser Removal Of Conductive Seed Layers
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US Patent:

20120184099, Jul 19, 2012
Filed:

Jan 11, 2012
Appl. No.:

13/348063
Inventors:

Matthew E. Souter - Tustin CA, US
Assignee:

Tamarack Scientific Co. Inc. - Corona CA
International Classification:

H01L 21/3213
B29C 67/00
B29C 37/00
US Classification:

438669, 4251744, 264400, 257E21314
Abstract:

A method for making conductive traces and interconnects on a surface of a substrate includes, for an embodiment, forming a dielectric or polymer layer on the surface of the substrate, forming a seed layer of an electrically conductive material on the dielectric or polymer layer, patterning a photoresist on the seed layer, forming the conductive traces on the patterned photoresist and seed layer, removing the photoresist from the substrate, and irradiating the surface of the substrate with a fluence of laser light effective to ablate the seed layer from areas of the substrate surface exclusive of the conductive traces.

Maskless Selective Retention Of A Cap Upon A Conductor From A Nonconductive Capping Layer
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US Patent:

20180082965, Mar 22, 2018
Filed:

Nov 15, 2017
Appl. No.:

15/813342
Inventors:

- Armonk NY, US
Brittany L. Hedrick - Wappingers Falls NY, US
Nicholas A. Polomoff - White Plains NY, US
TaeHo Kim - Hwaseong, KR
Matthew E. Souter - Tustin CA, US
Assignee:

SUSS MicroTec Photonic Systems Inc. - Corona CA
International Classification:

H01L 23/00
Abstract:

A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Maskless Selective Retention Of A Cap Upon A Conductor From A Nonconductive Capping Layer
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US Patent:

20180076160, Mar 15, 2018
Filed:

Nov 15, 2017
Appl. No.:

15/813311
Inventors:

- Armonk NY, US
Brittany L. Hedrick - Wappingers Falls NY, US
Nicholas A. Polomoff - White Plains NY, US
TaeHo Kim - Hwaseong, KR
Matthew E. Souter - Tustin CA, US
Assignee:

SUSS MicroTec Photonic Systems Inc. - Corona CA
International Classification:

H01L 23/00
Abstract:

A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Maskless Selective Retention Of A Cap Upon A Conductor From A Nonconductive Capping Layer
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US Patent:

20170117241, Apr 27, 2017
Filed:

Oct 22, 2015
Appl. No.:

14/920197
Inventors:

- Armonk NY, US
Brittany L. Hedrick - Wappingers Falls NY, US
Nicholas A. Polomoff - White Plains NY, US
TaeHo Kim - Hwaseong, KR
Matthew E. Souter - Tustin CA, US
Assignee:

SUSS MicroTec Photonic Systems Inc. - Corona CA
International Classification:

H01L 23/00
Abstract:

A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Substrate Including Selectively Formed Barrier Layer
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US Patent:

20160204028, Jul 14, 2016
Filed:

Mar 17, 2016
Appl. No.:

15/072685
Inventors:

- Armonk NY, US
- Corona CA, US
Nicholas A. Polomoff - White Plains NY, US
Jennifer D. Schuler - Wappingers Falls NY, US
Matthew E. Souter - Tustin CA, US
Christopher L. Tessler - Poughquag NY, US
International Classification:

H01L 21/768
Abstract:

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Substrate Including Selectively Formed Barrier Layer
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US Patent:

20150357235, Dec 10, 2015
Filed:

Aug 18, 2015
Appl. No.:

14/828608
Inventors:

- Armonk NY, US
- Corona CA, US
Nicholas A. Polomoff - White Plains NY, US
Jennifer D. Schuler - Wappingers Falls NY, US
Matthew E. Souter - Tustin CA, US
Christopher L. Tessler - Poughquag NY, US
International Classification:

H01L 21/768
Abstract:

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Substrate Including Selectively Formed Barrier Layer
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US Patent:

20150348831, Dec 3, 2015
Filed:

May 28, 2014
Appl. No.:

14/288840
Inventors:

- Armonk NY, US
- Corona CA, US
Nicholas A. Polomoff - White Plains NY, US
Jennifer D. Schuler - Wappingers Falls NY, US
Matthew E. Souter - Tustin CA, US
Christopher L. Tessler - Poughquag NY, US
Assignee:

International Business Machines Corporation - Armonk NY
SUSS MicroTec Photonic Systems Inc. - Corona CA
International Classification:

H01L 21/768
Abstract:

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Laser Removal Of Conductive Seed Layers
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US Patent:

20150014287, Jan 15, 2015
Filed:

Jul 14, 2014
Appl. No.:

14/331141
Inventors:

- Corona CA, US
Matthew E. Souter - Tustin CA, US
International Classification:

B23K 26/40
B23K 26/06
B23K 26/08
B23K 26/36
US Classification:

21912169, 21912168
Abstract:

Various techniques are disclosed for an apparatus and a method to remove a layer from a substrate having a pattern formed on the layer. In one example, the apparatus comprises a stage configured to receive and hold the substrate. The apparatus may further comprise an irradiating device comprising a projection lens and configured to irradiate the surface of the substrate with pulses of laser light having a selected fluence to remove an interstitial portion of the layer between the pattern without removing the pattern for corresponding irradiated areas of the substrate. The pulses of laser light may be focused through the projection lens, and the stage and the projection lens may be configured to move continuously relative each other to irradiate a plurality of areas of the substrate with the pulses of laser light.