Rockwell Charter High School Aug 2008 - Jun 2011
Teacher
Heritage Schools Inc. Oct 2001 - Nov 2004
Academic Aide position of Teaching Assistant
Mountain Lands Applied Technology Center Jan 2001 - Aug 2001
Teacher
Digimedia Solutions Dec 2000 - Apr 2001
Lead Designer
Internet Development Inc. Nov 1999 - Dec 2000
Graphic Designer
Education:
Self-Educated 1976 - 2010
Skills:
Leadership Marketing Web Development Social Media Teaching Time Management Teamwork Curriculum Design Social Networking Blogging Community Outreach Public Speaking Team Leadership Social Media Marketing Entrepreneurship Nonprofits Research Online Marketing Telecommunications Graphic Design Customer Service Microsoft Office
On Semiconductor
Marketing Director, Analog Solutions Group
On Semiconductor
Strategic Marketing Manager
University of Utah Aug 2008 - Dec 2008
Professor
On Semiconductor 2001 - 2008
Staff Engineer
Independent Consulting Aug 2003 - Oct 2004
Consultant
Education:
University of Utah 1998 - 2002
Skills:
Semiconductors Analog Circuit Design Semiconductor Industry Ic Mixed Signal Asic Analog Project Management Product Management Product Development Product Engineering Cmos Soc Integrated Circuit Design Microelectronics Power Management Eda Silicon Circuit Design Cadence Virtuoso Technical Marketing Electronics Strategy Low Power Design Debugging Microprocessors Rtl Design Rf Verilog Application Specific Integrated Circuits
2010 to 2000 Work Zone & Flagger InstructorNew Castle Police Department
2009 to 2000 Part-Time OfficerHannaford Brothers
2002 to 2012 Grocery Clerk / Overnight Grocery ClerkBristol Fire Department Bristol, RI 2007 to 2009 Probationary MemberRoger Williams University Bristol, RI Mar 2006 to 2009 Student WorkerNew Hampshire Police Cadet Training Academy Concord, NH 2006 to 2007 CadetWinnacunnet High School Marine Corp Jr. ROTC Hampton, NH 2001 to 2004 CadetHannaford Brothers Hampton, NH 2000 to 2001 Service Clerk
Education:
Roger Williams University Bristol, RI 2009 Bachelor of Science in Criminal JusticeWinnacunnet High School Hampton, NH 2001 to 2005 High School DiplomaSeacoast School of Technology through Winnacunnet High School Exeter, NH 2005 Information Technology Essentials/ Computer Networking
Skills:
+Interactive Use of Force-Simunitions Training level II [Spring of 2011] +Work Zone & Flagger Instructor [2010-Present] +New Hampshire Police Cadet Training Academy [2006,2007] -26th Advanced Session + Winnacunnet High School Marine Corp Jr. ROTC [2001-2004] -Cadet Sergeant + Understanding of Microsoft Word, Excel and Power point
Matthew A. Tyler - Kaysville UT, US John J. Naughton - Idaho Falls ID, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 29/74
US Classification:
257173, 257355, 361 915
Abstract:
A current dissipation circuit that dissipates excess current to or from a circuit node when that monitored circuit node experiences abnormal voltage conditions, rather than having that excess current being dissipated through other protected circuitry. The current dissipation circuit may use single well technology, and may even provide reverse voltage protection without necessarily triggering more significant current dissipation. In another embodiment, the current dissipation circuit is provided by a series connection of at least five alternating p-type and n-type regions provided between the monitored circuit node and a current source or sink.
A circuit that includes a controller and at least one control I/O pin. When the controller is placed into an initial state, the controller initializes the circuit into an initial operation mode. Depending on whether or not signal(s) satisfying predetermined criteria are applied to at least one of the control I/O pins, the controller will cause the circuit to enter one of two or more post-initial operation modes. Accordingly, by initializing the controller, and by controlling a signal on the control I/O pin(s), the operating mode of the circuit may be controlled. In one embodiment, a given control pin might be configurable to be both analog and digital, depending on the circuit's operation mode.
Method Of Forming An Eeprom Device And Structure Therefor
John J. Naughton - Idaho Falls ID, US Matthew Tyler - Kaysville UT, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/8238
US Classification:
438201, 438211, 257E21179, 257E21422, 257E2168
Abstract:
In one embodiment, an EEPROM device is formed to include a metal layer having an opening therethrough. The opening overlies a portion of a floating gate of the EEPROM device.
Method Of Forming An Eeprom Device And Structure Therefor
John J. Naughton - Idaho Falls ID, US Matthew Tyler - Kaysville UT, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 29/76 H01L 29/788
US Classification:
257314, 257315, 257E29129, 257E293
Abstract:
In one embodiment, an EEPROM device is formed to include a metal layer having an opening therethrough. The opening overlies a portion of a floating gate of the EEPROM device.
Multi-Pad Shared Current Dissipation With Heterogenic Current Protection Structures
Matthew A. Tyler - Kaysville UT, US John J. Naughton - Idaho Falls ID, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H02H 9/00 H02H 3/08 H02H 9/02
US Classification:
361 56, 361 931
Abstract:
Current protection in integrated circuit having multiple pads. Different types of current protection structures may be associated with different pads. A common current discharge or charge path may be used to provide current to or draw current from various of these heterogenic current protection structures. Since a common current discharge or charge path is used, the metallization used to formulate a discharge solution is significant simplified. Additionally, the protection structures may be provided with selectively conductive regions that are approximately radially symmetrical around the circumference of the pad. Accordingly, if the protection structures are slightly off center with respect to the bond pad (due to, for example, mask alignment error), the error in the amount of active region around the circumference of the pad is at least partially averaged out.
Riley D. Beck - Eagle Mountain UT, US Kent D. Layton - Lehi UT, US Matthew A. Tyler - Kaysville UT, US Scott R. Grange - Pleasant Grove UT, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
G01R 31/14
US Classification:
324509
Abstract:
A method and circuit for determining a circuit element parameter in a ground fault circuit interrupter circuit. An electrical signal provided to a first node is used to generate another electrical signal at a second node. The electrical signal at the second node is multiplexed with a modulation signal to generate a modulated signal that is then filtered and converted into a digital representation of a portion of the circuit element parameter. The electrical signal at the second node is multiplexed with the modulation signal after it has been phase shifted to produce a modulated signal that is filter and converted into a digital representation of another portion of the circuit element parameter. In another aspect, a slope based solenoid self-test method is used for self-testing in a GFCI circuit. Alternatively, a method for determining a wiring fault is provided using a digital filter.
Riley D. Beck - Eagle Mountain UT, US Kent D. Layton - Lehi UT, US Matthew A. Tyler - Kaysville UT, US Scott R. Grange - Pleasant Grove UT, US
International Classification:
G01R 27/16
US Classification:
324691
Abstract:
A method and circuit for determining a circuit element parameter in a ground fault circuit interrupter circuit. An electrical signal provided to a first node is used to generate another electrical signal at a second node. The electrical signal at the second node is multiplexed with a modulation signal to generate a modulated signal that is then filtered and converted into a digital representation of a portion of the circuit element parameter. The electrical signal at the second node is multiplexed with the modulation signal after it has been phase shifted to produce a modulated signal that is filter and converted into a digital representation of another portion of the circuit element parameter. In another aspect, a slope based solenoid self-test method is used for self-testing in a GFCI circuit. Alternatively, a method for determining a wiring fault is provided using a digital filter.
Continuous And Semi-Continuous Methods Of Semi-Solid Electrode And Battery Manufacturing
- Cambridge MA, US Naoki OTA - Lexington MA, US Matthew R. TYLER - New York NY, US Richard K. HOLMAN - Wellesley MA, US Ricardo BAZZARELLA - Woburn MA, US Mark DUDZIAK - Sharon MA, US
Assignee:
24M Technologies, Inc. - Cambridge MA
International Classification:
H01M 4/139 H01M 4/04
Abstract:
Embodiments described herein relate generally to systems and methods for continuously and/or semi-continuously manufacturing semi-solid electrodes and batteries incorporating semi-solid electrodes. In some embodiments, the process of manufacturing a semi-solid electrode includes continuously dispensing a semi-solid electrode slurry onto a current collector, separating the semi-solid electrode slurry into discrete portions, and cutting the current collector to form a finished electrode.
Medicine Doctors
Dr. Matthew D Tyler, Kalamazoo MI - DO (Doctor of Osteopathic Medicine)