Matthew B Weldon

US Patent:

6447370, Sep 10, 2002

Filed:

Apr 17, 2001

Appl. No.:

09/836789

Inventors:

Matthew Weldon - Phoenix AZ

Assignee:

SpeedFam-IPEC Corporation - Chandler AZ

International Classification:

B24B 5100

US Classification:

451 6, 451 41

Abstract:

The present invention provides a method of presenting a wafer to a metrology device for measuring surface characteristics of the wafer. In accordance with one aspect of the present invention, the metrology device is physically integrated with the wafer processing machine between two wafer processing stations. The metrology device measures the uniformity and or thickness of the wafer. In the preferred embodiment, the measuring device is a single wavelength multi-angle reflectometry device. The device comprises a light source provided from multiple emission points. In the preferred embodiment, the light source comprises a laser and the emission point comprise fiber optic cabling. In accordance with yet another aspect of the present invention, a wafer location means is provided to track the position of the wafer passing over the wafer measurement device. Preferably, the tracking device comprises a light curtain comprising a light beam which detects when the wafer is entering the measuring device and suitably enables the tracking of the location of the wafer.

US Patent:

6805613, Oct 19, 2004

Filed:

Oct 17, 2000

Appl. No.:

09/690521

Inventors:

Matthew Weldon - Phoenix AZ
Thomas Laursen - Tempe AZ
Malcolm Grief - Chandler AZ
Paul Holzapfel - Mercer PA
Mark A. Meloni - Lewisville TX
Robert Eaton - Scottsdale AZ

Assignee:

SpeedFam-IPEC Corporation - Chandler AZ

International Classification:

B24B 4912

US Classification:

451 6, 451288, 451 5

Abstract:

The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

US Patent:

6960115, Nov 1, 2005

Filed:

Aug 22, 2003

Appl. No.:

10/646011

Inventors:

Matthew Weldon - Phoenix AZ, US
Thomas Laursen - Tempe AZ, US
Malcolm Grief - Chandler AZ, US
Paul Holzapfel - Mercer PA, US
Mark A. Meloni - Lewisville TX, US
Robert Eaton - Scottsdale AZ, US

Assignee:

SpeedFam-IPEC Corporation - Chandler AZ

International Classification:

B24B049/12

US Classification:

451 6, 451 41

Abstract:

The invention is a method and apparatus for planarizing a wafer. Discrete measurements are taken across the surface of the wafer at a desired spatial density. The measurements may be generated using a flash lamp to reflect a light signal off the surface of the wafer with a spectrometer analyzing the reflected light. A plurality of probes may be used at different locations to shorten the time necessary for taking measurements across the full front surface of the wafer and for allowing a plurality of areas to be sampled substantially simultaneously. A control system receives the measurements and their corresponding locations. The control system is then able to analyze the data looking for areas or bands on the front surface of the wafer that need an increase or decrease in material removal rate. The control system is then able to adjust one or more planarization parameters to improve the process for the current wafer or for future wafers.

US Patent:

20010039462, Nov 8, 2001

Filed:

Apr 2, 2001

Appl. No.:

09/824110

Inventors:

Rafael Mendez - Chandler AZ, US
Randy Smith - Clackamas OR, US
Matthew Weldon - Phoenix AZ, US
Adithya Mokshagundam - Phoenix AZ, US
David Wasinger - Scottsdale AZ, US

International Classification:

G05B013/02

US Classification:

700/045000

Abstract:

A system and method for predicting software models used in chemical mechanical polishing (CMP) of workpieces using material-centric process instrumentation. One embodiment is a system which includes a feed forward loop for computing predictive calculations, a feed back loop for computing run-to-run calculations, a historical database which links together the feed forward and feed back loops, and a computational engine used to calculate new or adjusted CMP process parameters.

US Patent:

20030045008, Mar 6, 2003

Filed:

Aug 31, 2001

Appl. No.:

09/943963

Inventors:

Gregory Olsen - Tempe AZ, US
Matthew Weldon - Phoenix AZ, US

International Classification:

G01R031/26
H01L021/66
C23F001/00

US Classification:

438/007000, 438/016000, 156/345130

Abstract:

An apparatus for monitoring changes in the surface of a wafer during processing of the wafer is provided. The apparatus includes an optical transmission assembly configured to transmit to an area of the wafer a number of first discrete bands of transmitted light. Each of said number of first discrete bands of transmitted light has an effective wavelength. The apparatus also includes an optical detection assembly configured to receive a number of discrete bands of reflected light reflected from the area of the wafer. The optical detection assembly is further configured to detect a reflected intensity of each of the number of discrete bands of reflected light. An analyzer is configured to receive from the optical detection assembly the reflected intensity of each of the number of discrete bands of reflected light and is configured to detect changes in the surface of the wafer during processing from the reflected intensity.