Mengqi Te Ye from 45596 Cherokee Ln, Fremont, CA 94539, age 52

Protective Offset Sputtering
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US Patent:

8454804, Jun 4, 2013
Filed:

Oct 28, 2005
Appl. No.:

11/262193
Inventors:

Mengqi Ye - San Jose CA, US
Zhendong Liu - San Jose CA, US
Peijun Ding - Saratoga CA, US
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

C23C 14/35
US Classification:

20419212, 20419215, 20419217, 20429818, 20429819, 20429823, 20429828
Abstract:

Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Protective Offset Sputtering
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US Patent:

8460519, Jun 11, 2013
Filed:

Mar 23, 2006
Appl. No.:

11/389610
Inventors:

Mengqi Ye - San Jose CA, US
Zhendong Liu - San Jose CA, US
Peijun Ding - Saratoga CA, US
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

C23C 14/35
US Classification:

20419212, 20419215, 20419217, 20419218, 2042982, 20429823, 20429828
Abstract:

Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Sputtering Of Thermally Resistive Materials Including Metal Chalcogenides
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US Patent:

8500963, Aug 6, 2013
Filed:

Jul 17, 2007
Appl. No.:

11/778648
Inventors:

Mengqi Ye - San Jose CA, US
Keith A. Miller - Sunnyvale CA, US
Peijun Ding - Saratoga CA, US
Goichi Yoshidome - Emeryville CA, US
Rong Tao - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 14/35
US Classification:

20419215, 20419212, 20419217, 20419225
Abstract:

A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120 C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

Physical Vapor Deposition Chamber Having An Adjustable Target
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US Patent:

20060096851, May 11, 2006
Filed:

Nov 8, 2004
Appl. No.:

10/984291
Inventors:

Ilya Lavitsky - San Francisco CA, US
Michael Rosenstein - Sunnyvale CA, US
Goichi Yoshidome - Narita-shi, JP
Hougong Wang - Pleasanton CA, US
Zhendong Liu - San Jose CA, US
Mengqi Ye - Santa Clara CA, US
International Classification:

C23C 14/32
C23C 14/00
US Classification:

204192100, 204298230, 204298280
Abstract:

The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.

Physical Vapor Deposition Chamber Having A Rotatable Substrate Pedestal
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US Patent:

20060096857, May 11, 2006
Filed:

Nov 8, 2004
Appl. No.:

10/984265
Inventors:

Ilya Lavitsky - San Francisco CA, US
Michael Rosenstein - Sunnyvale CA, US
Goichi Yoshidome - Narita-shi, JP
Hougong Wang - Pleasanton CA, US
Zhendong Liu - San Jose CA, US
Mengqi Ye - Santa Clara CA, US
International Classification:

C23C 14/00
US Classification:

204298280, 204298020
Abstract:

The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal. Embodiments of the invention facilitate deposition of highly uniform thin films. In further embodiments, one or more sputtering targets are movably disposed above the pedestal. The orientation of the targets relative to the pedestal may be adjusted laterally, vertically or angularly. In one embodiment, the target may be adjusted between angles of about 0 to 45 degreees relative to an axis of pedestal rotation.

Thin Film Deposition
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US Patent:

20070099438, May 3, 2007
Filed:

Oct 28, 2005
Appl. No.:

11/260899
Inventors:

Mengqi Ye - Santa Clara CA, US
Peijun Ding - Saratoga CA, US
Hougong Wang - Pleasanton CA, US
Zhendong Liu - San Jose CA, US
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438778000
Abstract:

A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.

Physical Vapor Deposition Chamber Having An Adjustable Target
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US Patent:

20080116067, May 22, 2008
Filed:

Dec 5, 2007
Appl. No.:

11/950881
Inventors:

Ilya Lavitsky - San Francisco CA, US
Michael Rosenstein - Sunnyvale CA, US
Goichi Yoshidome - Narita-shi, JP
Hougong Wang - Pleasanton CA, US
Zhendong Liu - San Jose CA, US
Mengqi Ye - Santa Clara CA, US
International Classification:

C23C 14/34
US Classification:

20429812
Abstract:

The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.

Chalcogenide Target And Method
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US Patent:

20090107834, Apr 30, 2009
Filed:

Oct 29, 2007
Appl. No.:

11/927605
Inventors:

Mengqi Ye - Milpitas CA, US
Rong Tao - San Jose CA, US
Hua Chung - San Jose CA, US
Goichi Yoshidome - Emeryville CA, US
William Rhodes - Sunnyvale CA, US
Peijun Ding - Saratoga CA, US
International Classification:

C23C 14/06
C23C 14/34
C23C 14/35
US Classification:

20419215, 20429813, 20429807, 20429812
Abstract:

A sputtering target for a sputtering chamber comprises a sputtering plate composed of a chalcogenide material comprising an average yield strength of from about 40 MPa to about 120 MPa and a thermal conductivity of at least about 2.8 W/(mK). In one version the sputtering plate is composed of a chalcogenide material with a stoichiometric ratio that varies by less than about 5% throughout the body of the sputtering plate. In another version, the sputtering plate is composed of a chalcogenide material having an average grain size of at least 20 microns, and an oxygen content of less than 600 weight ppm. The sputtering target is sputtered by applying a pulsed DC voltage to the sputtering target.