Michael Bourbina

US Patent:

20140057450, Feb 27, 2014

Filed:

Feb 24, 2012

Appl. No.:

14/001298

Inventors:

Michael Bourbina - Midland MI, US
Jeffrey N. Bremmer - Midland MI, US
Eric S. Moyer - Midland MI, US
Sheng Wang - Midland MI, US
Craig R. Yeakle - Midland MI, US

International Classification:

H01L 21/683
B32B 7/12
B32B 33/00
H01L 21/304

US Classification:

438759, 428352, 428 418

Abstract:

A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

US Patent:

51087200, Apr 28, 1992

Filed:

May 20, 1991

Appl. No.:

7/702541

Inventors:

Michael Bourbina - Midland MI
James R. McCormick - Midland MI
Scott A. Wheelock - Bay City MI

Assignee:

Hemlock Semiconductor Corporation - Hemlock MI

International Classification:

B01D 900

US Classification:

422253

Abstract:

The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.

US Patent:

53611284, Nov 1, 1994

Filed:

Sep 10, 1992

Appl. No.:

7/942907

Inventors:

Michael Bourbina - Midland MI
Lydia L. Hwang - Midland MI
Joaquin E. Luna - Saginaw MI
Scott A. Wheelock - Freeland MI

Assignee:

Hemlock Semiconductor Corporation - Hemlock MI

International Classification:

G01N 100

US Classification:

356 36

Abstract:

The present invention is a method for analyzing irregular-shaped chunked silicon for low-level contaminates. The method comprises selecting a zonable-chunk of silicon and float-zoning the chunk of silicon to effect a distribution of surface contaminates into the bulk of a monocrystal of silicon. The float-zoned monocrystalline silicon is then processed into a wafer suitable for analysis for low-level contaminates.