Michael P Delaney

US Patent:

7439166, Oct 21, 2008

Filed:

Jun 11, 2005

Appl. No.:

11/150439

Inventors:

Ivan Milosavljevic - Westlake Village CA, US
Adele Schmitz - Newbury Park CA, US
Michael Delaney - Thousand Oaks CA, US
Michael Antcliffe - Los Angeles CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 21/28

US Classification:

438577, 438579, 257E21205

Abstract:

In one implementation, a method for fabricating a tiered structure is provided, which includes forming a source and a drain on a substrate with a gate formed therebetween. Formation of the gate includes depositing a gate foot using a gate foot mask having an opening through it to define the gate foot over the substrate. After forming the gate foot, the gate foot mask is stripped. A gate head mask is formed over the gate foot with the gate head mask exposing a top portion of the gate foot. A gate head is formed on the top portion of the gate foot using the gate head mask. A lift-off process is performed, removing the gate head mask.

US Patent:

7723761, May 25, 2010

Filed:

Sep 17, 2008

Appl. No.:

12/212627

Inventors:

Ivan Milosavljevic - Westlake Village CA, US
Adele Schmitz - Newbury Park CA, US
Michael Delaney - Thousand Oaks CA, US
Michael Antcliffe - Los Angeles CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 29/80

US Classification:

257280, 438182, 438574

Abstract:

In one embodiment, a tiered gate structure is provided having a substrate including a source, a drain and a gate thereon. The gate includes an elongated gate foot having a first deposition gate material extending from the substrate, the elongated gate foot having a top portion distal from the substrate. The gate head has a second deposition gate material and includes an elongated portion extending downward from the gate head to connect to the top portion of the elongated gate foot.

US Patent:

7795983, Sep 14, 2010

Filed:

Dec 26, 2006

Appl. No.:

11/646176

Inventors:

Michael J. Delaney - Thousand Oaks CA, US
Jose M. Cruz-Albrecht - Oak Park CA, US
Joseph F. Jensen - Camarillo CA, US
Keh-Chung Wang - Thousand Oaks CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H03B 29/00

US Classification:

331 78, 331117 R, 331167

Abstract:

A circuit for generating chaotic signals implemented using heterojunction bipolar transistors (HBTs) and utilized in low probability intercept communications. The HBT chaotic circuit generates truly random analog signals in the GHz range that are non-repeating and deterministic and may not be replicated by preloading a predetermined sequence. A fully differential autonomous chaotic circuit outputs two pairs of chaotic signals to be used in a communication system. As it is impossible to generate identical chaotic signals at the transmitter and receiver sites, the receiver itself sends the chaotic signal to be used for encoding to the transmitter. The receiver includes a chaotic signal generator and digitizes, upconverts, and transmits the generated chaotic signal to the transmitter. The transmitter uses the received chaotic signal to code data to be transmitted. The receiver decodes the transmitted data that is encoded by the chaotic signal to retrieve the transmitted data.

US Patent:

8180057, May 15, 2012

Filed:

Jun 3, 2010

Appl. No.:

12/793618

Inventors:

Michael J. Delaney - Thousand Oaks CA, US
Jose M. Cruz-Albrecht - Oak Park CA, US
Joseph F. Jensen - Camarillo CA, US
Keh-Chung Wang - Thousand Oaks CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H04L 9/00

US Classification:

380263

Abstract:

A circuit for generating chaotic signals implemented using heterojunction bipolar transistors (HBTs) and utilized in low probability intercept communications. The HBT chaotic circuit generates truly random analog signals in the GHz range that are non-repeating and deterministic and may not be replicated by preloading a predetermined sequence. A fully differential autonomous chaotic circuit outputs two pairs of chaotic signals to be used in a communication system. As it is impossible to generate identical chaotic signals at the transmitter and receiver sites, the receiver itself sends the chaotic signal to be used for encoding to the transmitter. The receiver includes a chaotic signal generator and digitizes, upconverts, and transmits the generated chaotic signal to the transmitter. The transmitter uses the received chaotic signal to code data to be transmitted. The receiver decodes the transmitted data that is encoded by the chaotic signal to retrieve the transmitted data.

US Patent:

51721970, Dec 15, 1992

Filed:

Dec 20, 1991

Appl. No.:

7/812875

Inventors:

Loi D. Nguyen - Agoura Hills CA
Michael J. Delaney - Thousand Oaks CA
Lawrence E. Larson - Santa Monica CA
Umesh K. Mishra - Cary NC

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01L 2980

US Classification:

357 22

Abstract:

A channel layer, donor layer, Schottky layer, and cap layer are formed on a substrate. A source and drain are formed on the cap layer. A gate is formed on the cap layer, or at the bottom of a recess which is formed through the cap layer and partially extends into the Schottky layer. The donor and Schottky layers are formed of a semiconductive material which includes an oxidizable component such as aluminum. A passivation or stop layer of a lattice-matched, non-oxidizable material is formed underlying the source, drain, and gate, and sealingly overlying the donor layer. The stop layer may be formed between the Schottky layer and the donor layer, or constitute a superlattice in combination with the Schottky layer consisting of alternating stop and Schottky sublayers. Alternatively, the stop layer may sealingly overlie the Schottky layer, and further constitute the cap layer.

US Patent:

47076313, Nov 17, 1987

Filed:

Jul 17, 1986

Appl. No.:

6/886457

Inventors:

Robert B. Stokes - Torrance CA
Kuo-Hsiung Yen - Manhattan Beach CA
Reynold S. Kagiwada - Los Angeles CA
Michael J. Delaney - Lomita CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01L 4108

US Classification:

310313A

Abstract:

A surface acoustic wave (SAW) diffraction-effect or interference-effect device with a highly isotropic substrate having a high coupling coefficient and low attenuation losses. The use of X-propagating rotated-Y-cut lithium niobate as the SAW substrate, with the Y rotation angle selected at 121 degrees, provides a practically isotropic material, with a high coupling coefficient and relatively low attenuation losses.

US Patent:

44993935, Feb 12, 1985

Filed:

Feb 15, 1984

Appl. No.:

6/580575

Inventors:

Robert B. Stokes - Torrance CA
Kuo-Hsiung Yen - Manhattan Beach CA
Reynold S. Kagiwada - Los Angeles CA
Michael J. Delaney - Lomita CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H03H 925
H01L 4108

US Classification:

310313A

Abstract:

A surface acoustic wave (SAW) device configured to operate as a spectrum analyzer, and having an array of input transducers disposed on a substrate in such positions as to produce a focused beam of acoustic energy at a focal arc, each position on the arc being representative of an input signal frequency. Output transducers produce electrical signals corresponding to the energy received at successive segments of the focal arc. The disclosed device includes various combinations of input transducer array improvements, some of which are to provide amplitude weighting of the input array, including aperture width weighting, capacitive weighting, resistive weighting, series-parallel weighting, and source withdrawal weighting. Another improvement in input array configuration eliminates close or overlapping electrodes of opposite polarities and thereby reduces parasitic capacitance and acoustic radiation between electrode elements. The use of curved input transducer fingers improves operation of the transducers as point sources.

US Patent:

55959172, Jan 21, 1997

Filed:

Jan 31, 1995

Appl. No.:

8/381042

Inventors:

Michael J. Delaney - Thousand Oaks CA
Loi D. Nguyen - Thousand Oaks CA
Minh V. Le - Simi Valley CA
Jorge L. Tizol - Los Angeles CA
James C. Loh - Torrance CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01L 2166

US Classification:

437 8

Abstract:

A method for hydrogen treatment of FETs for use in hermetically sealed packages is disclosed. FETs such as GaInAs HEMTs are treated before hermetic packaging by heating them in a hydrogen atmosphere until their drain currents degrade, and then continuing to heat them until their drain currents are restored. The HEMTs' drain currents are monitored and the process is continued until the currents stabilize. Thereafter the devices' temperature is lowered to the desired operating temperature and their drain currents are measured. If the drain currents after treatment are close enough to the current levels before treatment, the devices are selected; otherwise they are rejected.