Michael J Graf

US Patent:

6476399, Nov 5, 2002

Filed:

Sep 1, 2000

Appl. No.:

09/654379

Inventors:

Eric R. Harrington - Ipswich MA
Victor M. Benveniste - Gloucester MA
Michael A. Graf - Cambridge MA
Robert D. Rathmell - Exeter NH

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 3730

US Classification:

25045221, 200252, 200398

Abstract:

A system for inhibiting the transport of contaminant particles with an ion beam includes a particle charging system for charging particles within a region through which the ion beam travels. An electric field is generated downstream relative to the charged region so as to urge charged particles away from a direction of travel for the ion beam.

US Patent:

6534775, Mar 18, 2003

Filed:

Sep 1, 2000

Appl. No.:

09/654380

Inventors:

Eric R. Harrington - Ipswich MA
Victor M. Benveniste - Gloucester MA
Michael A. Graf - Cambridge MA
Robert D. Rathmell - Exeter NH

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 3730

US Classification:

25049221, 250398

Abstract:

A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.

US Patent:

6608315, Aug 19, 2003

Filed:

Nov 1, 2000

Appl. No.:

09/703769

Inventors:

Kourosh Saadatmand - Merrimac MA 01860
Michael A. Graf - Cambridge MA 02138
Edward K. McIntyre - Franklin MA 02038

International Classification:

H01J 37317

US Classification:

25049221

Abstract:

A mass analysis magnet assembly ( ) is provided for use in an ion implanter ( ), comprising: (i) a magnet ( ) for mass analyzing an ion beam ( ) output by an ion source ( ), the magnet providing an interior region ( ) through which the ion beam passes; and (ii) at least one strike plate ( ) in part forming an outer boundary of the interior region ( ). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source ( ). The strike plate ( ) may comprise an upper layer ( ) of isotopically pure carbon C-12 isotope positioned atop a lower substrate ( ).

US Patent:

6992310, Jan 31, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917997

Inventors:

Joseph Ferrara - Middleton MA, US
Michael A. Graf - Belmont MA, US
Bo H. Vanderberg - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 37/20

US Classification:

25049221, 25044211

Abstract:

Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

US Patent:

7375355, May 20, 2008

Filed:

May 12, 2006

Appl. No.:

11/432977

Inventors:

Joseph Ferrara - Georgetown MA, US
Patrick R. Splinter - Middleton MA, US
Michael A. Graf - Belmont MA, US
Victor M. Benveniste - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317

US Classification:

25049221, 2504922, 2504921, 2504923

Abstract:

An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

US Patent:

7423277, Sep 9, 2008

Filed:

Mar 14, 2006

Appl. No.:

11/374945

Inventors:

Alexander S. Perel - Danvers MA, US
Phil J. Ring - Beverly MA, US
Ronald A. Capodilupo - Beverly MA, US
Michael A. Graf - Belmont MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 49/10

US Classification:

25049221, 25049223, 250396 R, 250398, 250423 R, 250424

Abstract:

An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

US Patent:

7557363, Jul 7, 2009

Filed:

Oct 4, 2006

Appl. No.:

11/543346

Inventors:

Yongzhang Huang - Hamilton MA, US
Brian S. Freer - Medford MA, US
John Ye - Brighton MA, US
Christopher Godfrey - Rowley MA, US
Michael A. Graf - Belmont MA, US
Patrick Splinter - Middleton MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317

US Classification:

25049221

Abstract:

A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

US Patent:

7750320, Jul 6, 2010

Filed:

Dec 22, 2006

Appl. No.:

11/644623

Inventors:

Joseph Ferrara - Georgetown MA, US
Bo H. Vanderberg - Gloucester MA, US
Michael A. Graf - Belmont MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21K 5/10

US Classification:

25049221, 2504922, 25044211

Abstract:

A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.