Michael A Graf

US Patent:

6828572, Dec 7, 2004

Filed:

Apr 1, 2003

Appl. No.:

10/404493

Inventors:

Ronald N. Reece - Westwood MA
Michael A. Graf - Cambridge MA
Thomas Parrill - North Andover MA
Brian S. Freer - Medford MA

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G01N 2100

US Classification:

25049221, 2504911, 2504921, 2504923

Abstract:

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

US Patent:

6953942, Oct 11, 2005

Filed:

Sep 20, 2004

Appl. No.:

10/944989

Inventors:

Michael A. Graf - Belmont MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J037/302

US Classification:

25049221, 25044211

Abstract:

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

US Patent:

6992308, Jan 31, 2006

Filed:

Feb 27, 2004

Appl. No.:

10/788861

Inventors:

Michael A. Graf - Cambridge MA, US
Andrew M. Ray - Newburyport MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
G21G 5/00

US Classification:

25049221, 2504923, 2504922

Abstract:

The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

US Patent:

6992310, Jan 31, 2006

Filed:

Aug 13, 2004

Appl. No.:

10/917997

Inventors:

Joseph Ferrara - Middleton MA, US
Michael A. Graf - Belmont MA, US
Bo H. Vanderberg - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 37/20

US Classification:

25049221, 25044211

Abstract:

Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

US Patent:

7375355, May 20, 2008

Filed:

May 12, 2006

Appl. No.:

11/432977

Inventors:

Joseph Ferrara - Georgetown MA, US
Patrick R. Splinter - Middleton MA, US
Michael A. Graf - Belmont MA, US
Victor M. Benveniste - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317

US Classification:

25049221, 2504922, 2504921, 2504923

Abstract:

An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

US Patent:

7423277, Sep 9, 2008

Filed:

Mar 14, 2006

Appl. No.:

11/374945

Inventors:

Alexander S. Perel - Danvers MA, US
Phil J. Ring - Beverly MA, US
Ronald A. Capodilupo - Beverly MA, US
Michael A. Graf - Belmont MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 49/10

US Classification:

25049221, 25049223, 250396 R, 250398, 250423 R, 250424

Abstract:

An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

US Patent:

7589333, Sep 15, 2009

Filed:

Sep 29, 2006

Appl. No.:

11/540449

Inventors:

Michael A. Graf - Belmont MA, US
Edward C. Eisner - Lexington MA, US
William F. DiVergilio - Brookline MA, US
Daniel R. Tieger - Manchester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 37/256

US Classification:

25049221, 2504923, 250427, 250309, 31511181, 438514

Abstract:

An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

US Patent:

7701230, Apr 20, 2010

Filed:

Apr 30, 2007

Appl. No.:

11/742178

Inventors:

John Zheng Ye - Brighton MA, US
Michael Paul Cristoforo - Beverly MA, US
Yongzhang Huang - Hamilton MA, US
Michael A. Graf - Belmont MA, US
Bo H. Vanderberg - Gloucester MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G01R 27/08
H01J 37/08

US Classification:

324713, 25049221

Abstract:

One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.