A method and apparatus for partially strapping two polysilicon lines, each having a first end and second end, uses a metal line having a plurality of spaced apart metal segments with each metal segment partially strapping a different portion of a polysilicon line. The metal segments are arranged from the first end to the second end with the signals propagating from the second end to the first end. Where two metal segments are used, the segments have lengths of.
Method And Apparatus For Strapping Two Polysilicon Lines In A Semiconductor Integrated Circuit Device
A method and apparatus for partially strapping two polysilicon lines, each having a first end and second end, uses a metal line having a plurality of spaced apart metal segments with each metal segment partially strapping a different portion of a polysilicon line. The metal segments are arranged from the first end to the second end with the signals propagating from the second end to the first end. Where two metal segments are used, the segments have lengths of.
Non-Volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
Xian Liu - Sunnyvale CA, US Michael James Heinz - Livermore CA, US Eugene Jinglun Tam - Saratoga CA, US Michael K. Doan - Milpitas CA, US Alexander Kotov - Sunnyvale CA, US Tho Ngoc Dang - San Jose CA, US Jack Edward Frayer - Boulder Creek CA, US Jung Hee Yun - Fremont CA, US Thuan T. Vu - San Jose CA, US
Assignee:
Silicon Storage Technology, Inc. - San Jose CA
International Classification:
G11C 16/04
US Classification:
3651852, 36518521, 36518522, 36518528
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
Non-Volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
Xian Liu - Sunnyvale CA, US Michael James Heinz - Livermore CA, US Eugene Jinglun Tam - Saratoga CA, US Michael K. Doan - Milpitas CA, US Alexander Kotov - Sunnyvale CA, US Tho Ngoc Dang - San Jose CA, US Jack Edward Frayer - Boulder Creek CA, US Jung Hee Yun - Fremont CA, US Thuan T. Vu - San Jose CA, US
Assignee:
Silicon Storage Technology, Inc. - San Jose CA
International Classification:
G11C 16/06
US Classification:
3651852, 36518511, 36518521, 36518522, 36518528
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
Non-Volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
Xian Liu - Sunnyvale CA, US Michael James Heinz - Livermore CA, US Eugene Jinglun Tam - Saratoga CA, US Michael K. Doan - Milpitas CA, US Alexander Kotov - Sunnyvale CA, US Tho Ngoc Dang - San Jose CA, US Jack Edward Frayer - Boulder Creek CA, US Jung Hee Yun - Fremont CA, US Thuant T. Vu - San Jose CA, US
International Classification:
G11C 16/06
US Classification:
3652101
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
Non-Volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
- San Jose CA, US Michael James Heinz - Livermore CA, US Eugene Jinglun Tam - Saratoga CA, US Michael K. Doan - Milpitas CA, US Alexander Kotov - Sunnyvale CA, US Tho Ngoc Dang - San Jose CA, US Jack Edward Frayer - Boulder Creek CA, US Jung Hee Yun - Fremont CA, US Thuan T. Vu - San Jose CA, US
Assignee:
Silicon Storage Technology, Inc. - San Jose CA
International Classification:
G11C 7/00
US Classification:
36518907
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
APPHOTO INLAF102: Traffic makes their way through a flooded portion of U.S. 52 after heavy rains from the remnants of Hurricane Isaac came through the area Saturday, September 1, 2012, in Lafayette, Ind. (AP Photo/Journal & Courier, Michael Heinz) MANDATORY CREDIT; NO SALES (1 Sep 2012)