Michael Edward Irwin

Address:

12300 Blf Shr Dr, Knoxville, TN 37922

Phone:

8656757664

VIN:

1HGCP26339A004204

Make:

HONDA

Model:

ACCORD

Year:

2009

US Patent:

20230017305, Jan 19, 2023

Filed:

Apr 27, 2022

Appl. No.:

17/730325

Inventors:

- Boise ID, US
Vladimir Mikhalev - Boise ID, US
Phani Bharadwaj Vanguri - Boise ID, US
James Eric Davis - Meridian ID, US
Kenneth William Marr - Boise ID, US
Chiara Cerafogli - Boise ID, US
Michael James Irwin - Boise ID, US
Domenico Tuzi - Balsorano, IT
Umberto Siciliani - Rubano, IT
Alessandro Alilla - L'Aquila, IT
Andrea Giovanni Xotta - Cornedo Vicentino, IT
Chung-Ping Wu - Cupertino CA, US
Luigi Marchese - Albignasego, IT
Pasquale Conenna - Rieti, IT
Joonwoo Nam - Cupertino CA, US
Ishani Bhatt - Sunnyvale CA, US
Fulvio Rori - Biose ID, US
Andrea D'Alessandro - Avezzano, IT
Michele Piccardi - Cupertino CA, US
Aleksey Prozapas - Kuna ID, US
Luigi Pilolli - L'Aquila, IT
Violante Moschiano - Avezzano, IT

International Classification:

H01L 27/02
H01L 27/11519
H01L 27/11524
H01L 27/11529
H01L 27/11556
H01L 27/11565
H01L 27/1157
H01L 27/11573
H01L 27/11582

Abstract:

A variety of applications can include apparatus or methods that provide a well ring for resistive ground power domain segregation. The well ring can be implemented as a n-well in a p-type substrate. Resistive separation between ground domains can be generated by biasing a n-well ring to an external supply voltage. This approach can provide a procedure, from a process standpoint, that provides relatively high flexibility to design for chip floor planning and simulation, while providing sufficient noise rejection between independent ground power domains when correctly sized. Significant noise rejection between ground power domains can be attained.

US Patent:

20210375670, Dec 2, 2021

Filed:

Aug 12, 2021

Appl. No.:

17/444948

Inventors:

- Boise ID, US
Yongjun J. Hu - Boise ID, US
David A. Kewley - Boise ID, US
Md Zahid Hossain - Boise ID, US
Michael J. Irwin - Boise ID, US
Daniel Billingsley - Meridian ID, US
Suresh Ramarajan - Boise ID, US
Robert J. Hanson - Boise ID, US
Biow Hiem Ong - Singapore, SG
Keen Wah Chow - Singapore, SG

International Classification:

H01L 21/768

Abstract:

An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

US Patent:

20210050252, Feb 18, 2021

Filed:

Aug 16, 2019

Appl. No.:

16/542507

Inventors:

- Boise ID, US
Yongjun J. Hu - Boise ID, US
David A. Kewley - Boise ID, US
Md Zahid Hossain - Boise ID, US
Michael J. Irwin - Boise ID, US
Daniel Billingsley - Meridian ID, US
Suresh Ramarajan - Boise ID, US
Robert J. Hanson - Boise ID, US
Biow Hiem Ong - Singapore, SG
Keen Wah Chow - Singapore, SG

International Classification:

H01L 21/768

Abstract:

An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

US Patent:

20150318477, Nov 5, 2015

Filed:

Jul 10, 2015

Appl. No.:

14/796468

Inventors:

Michael D. Irwin - Dallas TX, US
Jerred A. Chute - Dallas TX, US
Vivek V. Dhas - Dallas TX, US

International Classification:

H01L 51/00
H01L 51/42
C23C 14/06
C07F 7/24
C23C 16/50

Abstract:

A method for processing a perovskite photoactive layer. The method comprises depositing a lead salt precursor onto a substrate to form a lead salt thin film, depositing a second salt precursor onto the lead salt thin film, annealing the substrate to form a perovskite material.

US Patent:

20150144195, May 28, 2015

Filed:

Mar 13, 2014

Appl. No.:

14/209013

Inventors:

Michael D. Irwin - Dallas TX, US
Jerred A. Chute - Dallas TX, US
Vivek V. Dhas - Dallas TX, US

International Classification:

H01L 31/032

US Classification:

136260, 136265, 136261, 136262, 136263

Abstract:

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes.

US Patent:

20150144196, May 28, 2015

Filed:

Jul 31, 2014

Appl. No.:

14/448053

Inventors:

Michael D. Irwin - Dallas TX, US
Jerred A. Chute - Dallas TX, US

International Classification:

H01G 9/20
H01L 51/42
H01L 31/032

US Classification:

136261, 136265, 136263, 136264

Abstract:

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

US Patent:

20150144198, May 28, 2015

Filed:

May 19, 2014

Appl. No.:

14/281196

Inventors:

Michael D. Irwin - Dallas TX, US
Jerred A. Chute - Dallas TX, US
Vivek V. Dhas - Dallas TX, US

International Classification:

H01G 9/20
H01L 51/00

US Classification:

136263

Abstract:

A photovoltaic cell of improved construction may include an active layer comprising first and second active material, and a dye. Either of the first and second active material may include a copper-oxide compound. The active layer may further include a thin-coat interfacial layer, which may coat at least a portion of either of the first and second active material. The dye may include a primary electron donor moiety, a core moiety, and an electron-withdrawing moiety.