Saint Joseph Comprehensive Care 160 Market St, Paterson, NJ 07505 9737544700 (Phone)
Medical Specialties Of St Josph 57 Willowbrook Blvd Suite 303, Wayne, NJ 07470 9737544060 (Phone)
Saint Josephs Reg Med Ctr INF 703 Main St Suite 619, Paterson, NJ 07503 9737543213 (Phone)
Certifications:
Infectious Disease, 1978 Internal Medicine, 1977
Awards:
Healthgrades Honor Roll
Languages:
English French
Hospitals:
Saint Joseph Comprehensive Care 160 Market St, Paterson, NJ 07505
Saint Josephs Reg Med Ctr INF 703 Main St Suite 619, Paterson, NJ 07503
Medical Specialties Of St Josph 57 Willowbrook Blvd Suite 303, Wayne, NJ 07470
Saint Joseph's Regional Medical Center 703 Main Street, Paterson, NJ 07503
Education:
Medical School University of Medicine And Dentistry of New Jersey / Newark Medical School St Marys Hosp Medical School Queens U Medical School Umdnj-University Hospital
Dr. Lange graduated from the Univ of Toronto, Fac of Med, Toronto, Ont, Canada in 1968. He works in Paterson, NJ and 2 other locations and specializes in Infectious Disease. Dr. Lange is affiliated with St Josephs Regional Medical Center.
Lawrence Anesthesia PA 325 Maine St, Laurence, KS 66044 7858427026 (phone), 7858427088 (fax)
Education:
Medical School University of Kansas School of Medicine Graduated: 1985
Languages:
English
Description:
Dr. Lange graduated from the University of Kansas School of Medicine in 1985. He works in Lawrence, KS and specializes in Anesthesiology. Dr. Lange is affiliated with Lawrence Memorial Hospital.
University of Toronto, Faculty of Medicine - Doctor of Medicine Kingston General Hospital - Residency - Internal Medicine
Board certifications:
American Board of Internal Medicine Certification in Internal Medicine American Board of Internal Medicine Sub-certificate in Infectious Disease (Internal Medicine)
Us Patents
Method For Combined Fabrication Of Indium Gallium Arsenide/Indium Phosphide Avalanche Photodiodes And P-I-N Photodiodes
J. Christopher Dries - Skillman NJ Michael Lange - Yardley PA
Assignee:
Sensors Unlimited, Inc. - Princeton NJ
International Classification:
H01L 31075
US Classification:
257458, 257436, 257437
Abstract:
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APDs) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
Method For Combined Fabrication Of Indium Gallium Arsenide/Indium Phosphide Avalanche Photodiodes And P-I-N Photodiodes
J. Christopher Dries - Skillman NJ Michael Lange - Yardley PA
Assignee:
Finisar Corporation - Sunnyvale CA
International Classification:
H01L 2100
US Classification:
438 91, 438 58, 438 59, 257 84, 257186, 257443
Abstract:
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APDs) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
Stephen R. Forrest - Princeton NJ, US Barry P. Rand - Princeton NJ, US Michael J. Lange - Newtown PA, US
Assignee:
The Trustees of Princeton University - Princeton NJ
International Classification:
H01L 31/00
US Classification:
257448, 257 40, 257431, 257432
Abstract:
The present invention is directed to organic photosensitive optoelectronic devices and methods of use for determining the position of a light source. Provided is an organic position sensitive detector (OPSD) comprising: a first electrode, which is resistive and may be either an anode or a cathode; a first contact in electrical contact with the first electrode; a second contact in electrical contact with the first electrode; a second electrode disposed near the first electrode; a donor semiconductive organic layer disposed between the first electrode and the second electrode; and an acceptor semiconductive organic layer disposed between the first electrode and the second electrode and adjacent to the donor semiconductive organic layer. A hetero-junction is located between the donor layer and the acceptor layer, and at least one of the donor layer and the acceptor layer is light absorbing. The OPSD has an optical beam spatial resolution of 20 μm and measurements are insensitive to fluctuations in incident light beam intensity and background illumination.
Combined Apd / Pin Ingaas Photodetector With Microlens Structure And Method Of Manufacture
An InGaAs photodetector is provided having an avalanche photodiode (APD), a p-intrinsic-n (PIN) photodiode, and a microlens structure that provides high optical fill factors for both the APD and the PIN photodiodes. The photodetector can be used for both ranging and imaging applications, can be formed as a single pixel, and multiple pixels can be fabricated to form a focal plane array. A method of fabricating the photodiode is also provided.
Very Low Leakage Jfet For Monolithically Integrated Arrays
Stephen Ross Forrest - Princeton NJ Marshall J. Cohen - Robbinsville NJ Michael J. Lange - Yardley PA Dong-Su Kim - Lawrenceville NJ
Assignee:
The Trustees of Princeton University - Princeton NJ
International Classification:
H01L 2980 H01L 31112
US Classification:
257258
Abstract:
A low leakage current monolithic InGaAs InP discrete device is provided for a focal plane array for near-infrared imaging. The array consists of a plurality of InGaAs p-i-n diodes for photodetectors, with each being integrated on a common substrate with an Inp junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a p-encapsulation of an n-drained of each JFET is employed.
Stephen R. Forrest - Princeton NJ Gregory H. Olsen - Princeton NJ Dong-Su Kim - Lawrenceville NJ Michael J. Lange - Morrisville PA
Assignee:
Trustees of Princeton University - Princeton NJ
International Classification:
H01L 31109 H01L 310304
US Classification:
257190
Abstract:
A multiwavelength focal plane array infrared detector is included on a common substrate having formed on its top face a plurality of In. sub. x Ga. sub. 1-x As (x. ltoreq. 53) absorption layers, between each pair of which a plurality of InAs. sub. y P. sub. 1-y (y
Method Of Fabricating Multiwavelength Infrared Focal Plane Array Detector
Stephen R. Forrest - Princeton NJ Gregory H. Olsen - Princeton NJ Dong-Su Kim - Lawrenceville NJ Michael J. Lange - Morrisville PA
Assignee:
Trustees of Princeton University - Princeton NJ
International Classification:
H01L 3118
US Classification:
437 3
Abstract:
A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In. sub. x Ga. sub. 1-x As (x. ltoreq. 53) absorption layers, between each pair of which a plurality of InAs. sub. y P. sub. 1-y (y. ltoreq. 1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.
Software Developer at Rentrak, Web-based Game Development at Freelance
Location:
Portland, Oregon
Industry:
Computer Software
Work:
Rentrak - Portland, Oregon Area since Sep 2011
Software Developer
Freelance since Aug 2006
Web-based Game Development
Dynamic Worldwide Media Feb 2009 - May 2011
Multimedia Design & Development
Dynamic Worldwide Training Consultants Feb 2009 - May 2011
Multimedia Development & Design
Education:
University of Advancing Technology 2008 - 2011
Bachelor of Science, in Software Engineering, with an emphasis in Artificial Life Programming
Rechtsfragen Der Finanzierung Eines Feindlichen Ubernahmeangebotes: Am Beispiel Der Grossen Publikumsgesellschaft Nach US-Amerikanischem Und Deutschem Recht