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Education:
University of Phoenix 2007 - 2014
Bachelor of Science (BS), Computer and Information Systems Security/Information Assurance
Name / Title
Company / Classification
Phones & Addresses
Michael Macmillan President, Secretary, Treasurer
Faith United Church of Christ Religious Organization · Churches
Michael MacMillan - ST PETERSBURG FL, US Raymond Cloutier - Alachua FL, US
International Classification:
A61B 17/70 A61B 34/30
Abstract:
The present invention provides for improved surgical methods for securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies. The present invention has at least one advantage of providing practical and advantageous methods for accessing the spinal vertebrae to insert spinal implants in various manners that overcome the disadvantages of posterior, trans-sacro-iliac and anterior lateral approaches thereto and minimize surgical trauma to the patient. Thus the present invention provides for the unmet need for an improved method for performing spinal surgical procedures (e.g., spinal fusion and/or fixations) that can securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies.
Silicon Carbide Semiconductor Devices Having Nitrogen-Doped Interface
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.
Silicon Carbide Semiconductor Devices Having Nitrogen-Doped Interface
- LAKE FOREST CA, US Michael MacMillan - Rancho Santa Margarita CA, US
Assignee:
GLOBAL POWER DEVICE COMPANY - Lake Forest CA
International Classification:
H01L 29/51 H01L 29/66 H01L 29/16
US Classification:
257 77, 438478, 438268
Abstract:
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.