Michael K Mcmahon

US Patent:

6387810, May 14, 2002

Filed:

Jun 28, 1999

Appl. No.:

09/340796

Inventors:

Gary J. Beardsley - Underhill VT
Zhong X. He - Essex Junction VT
Cuc K. Huynh - Jericho VT
Michael P. McMahon - Williston VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21304

US Classification:

438691, 438692, 438696, 438697

Abstract:

In a fabrication process, photoresist is disposed over a semiconductor substrate ( ), covering a front surface ( ) of the substrate ( ) and filling trenches ( ) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate ( ). An anisotropic etching process partially removes the photoresist in the trenches ( ), thereby creating recesses in the trenches ( ). Because the thickness of the photoresist is uniform throughout the substrate ( ) before the etching process, the depths of the recesses in different trenches ( ) are substantially equal to each other. A uniform recess depth throughout the substrate ( ) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate ( ) to have consistent parameters, characteristics, and performances.

US Patent:

6543995, Apr 8, 2003

Filed:

Jul 31, 2000

Appl. No.:

09/629308

Inventors:

Keith T. Honda - Ellington CT
Michael E. McMahon - Shapleigh ME
Steven J. Feigleson - Falmouth ME

Assignee:

United Technologies Corporation - Hartford CT

International Classification:

F01D 102

US Classification:

415189

Abstract:

A stator assembly for a rotary machine a stator vane for the assembly are disclosed. Various construction details are developed which facilitate assembly, disassembly and replaceability of the vane. The stator assembly includes a casing having a plurality of flats which adapts the case to engage a corresponding flat on the stator vane.

US Patent:

6559030, May 6, 2003

Filed:

Dec 13, 2001

Appl. No.:

10/015987

Inventors:

Thai Doan - Burlington VT
Zhong-Xiang He - Essex Junction VT
Michael P. McMahon - Holden MA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2176

US Classification:

438432, 438430, 438431, 438453, 438597, 438697, 438700

Abstract:

A method of forming a recessed polysilicon contact is provided. The method includes: forming a trench in a substrate; overfilling the trench with polysilicon; removing the polysilicon outside of the trench to provide a substantially planar surface; oxidizing the surface of the polysilicon in the trench using plasma oxidation; and removing an upper portion of the polysilicon from the trench.